Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • R. S. Pokharia
  • K. R. Khiangte
  • J. S. Rathore
  • Jan Schmidt
  • Hans-Jörg Osten
  • A. Laha
  • S. Mahapatra

Externe Organisationen

  • Indian Institute of Technology Bombay (IITB)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksOptical Components and Materials XVI
Herausgeber/-innenMichel J. F. Digonnet, Shibin Jiang
Herausgeber (Verlag)SPIE
Seitenumfang7
ISBN (elektronisch)9781510624702
PublikationsstatusVeröffentlicht - 27 Feb. 2019
VeranstaltungOptical Components and Materials XVI 2019 - San Francisco, USA / Vereinigte Staaten
Dauer: 4 Feb. 20196 Feb. 2019

Publikationsreihe

NameProceedings of SPIE - The International Society for Optical Engineering
Band10914
ISSN (Print)0277-786X
ISSN (elektronisch)1996-756X

Abstract

We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.

ASJC Scopus Sachgebiete

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Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. / Pokharia, R. S.; Khiangte, K. R.; Rathore, J. S. et al.
Optical Components and Materials XVI. Hrsg. / Michel J. F. Digonnet; Shibin Jiang. SPIE, 2019. 1091417 (Proceedings of SPIE - The International Society for Optical Engineering; Band 10914).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Pokharia, RS, Khiangte, KR, Rathore, JS, Schmidt, J, Osten, H-J, Laha, A & Mahapatra, S 2019, Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. in MJF Digonnet & S Jiang (Hrsg.), Optical Components and Materials XVI., 1091417, Proceedings of SPIE - The International Society for Optical Engineering, Bd. 10914, SPIE, Optical Components and Materials XVI 2019, San Francisco, USA / Vereinigte Staaten, 4 Feb. 2019. https://doi.org/10.15488/10267, https://doi.org/10.1117/12.2509720
Pokharia, R. S., Khiangte, K. R., Rathore, J. S., Schmidt, J., Osten, H.-J., Laha, A., & Mahapatra, S. (2019). Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. In M. J. F. Digonnet, & S. Jiang (Hrsg.), Optical Components and Materials XVI Artikel 1091417 (Proceedings of SPIE - The International Society for Optical Engineering; Band 10914). SPIE. https://doi.org/10.15488/10267, https://doi.org/10.1117/12.2509720
Pokharia RS, Khiangte KR, Rathore JS, Schmidt J, Osten HJ, Laha A et al. Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. in Digonnet MJF, Jiang S, Hrsg., Optical Components and Materials XVI. SPIE. 2019. 1091417. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.15488/10267, 10.1117/12.2509720
Pokharia, R. S. ; Khiangte, K. R. ; Rathore, J. S. et al. / Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. Optical Components and Materials XVI. Hrsg. / Michel J. F. Digonnet ; Shibin Jiang. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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title = "Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy",
abstract = "We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.",
keywords = "Germanium, Germanium-on-insulator, Molecular beam epitaxy, MSM photodiodes, NIR photodetector, Silicon photonics",
author = "Pokharia, {R. S.} and Khiangte, {K. R.} and Rathore, {J. S.} and Jan Schmidt and Hans-J{\"o}rg Osten and A. Laha and S. Mahapatra",
note = "Funding information: This research was funded by the Science and Engineering Research Board, Department of Science and Technology (DST), Government of India. Ravindra Singh Pokharia would also like to thank Kantimay Dasgupta, Aditya Jain, Swarup Deb and Himadri Chakraborty for their assistance during the metallization of the devices. The authors acknowledge the support from the Centre of Excellence in Nanotechnology, Departments of Physics and Electrical Engineering, and Industrial Research and Consulting Centre (IRCC) of IIT Bombay.; Optical Components and Materials XVI 2019 ; Conference date: 04-02-2019 Through 06-02-2019",
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series = "Proceedings of SPIE - The International Society for Optical Engineering",
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editor = "Digonnet, {Michel J. F.} and Shibin Jiang",
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Download

TY - GEN

T1 - Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy

AU - Pokharia, R. S.

AU - Khiangte, K. R.

AU - Rathore, J. S.

AU - Schmidt, Jan

AU - Osten, Hans-Jörg

AU - Laha, A.

AU - Mahapatra, S.

N1 - Funding information: This research was funded by the Science and Engineering Research Board, Department of Science and Technology (DST), Government of India. Ravindra Singh Pokharia would also like to thank Kantimay Dasgupta, Aditya Jain, Swarup Deb and Himadri Chakraborty for their assistance during the metallization of the devices. The authors acknowledge the support from the Centre of Excellence in Nanotechnology, Departments of Physics and Electrical Engineering, and Industrial Research and Consulting Centre (IRCC) of IIT Bombay.

PY - 2019/2/27

Y1 - 2019/2/27

N2 - We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.

AB - We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd2O3/Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd2O3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm.

KW - Germanium

KW - Germanium-on-insulator

KW - Molecular beam epitaxy

KW - MSM photodiodes

KW - NIR photodetector

KW - Silicon photonics

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U2 - 10.15488/10267

DO - 10.15488/10267

M3 - Conference contribution

AN - SCOPUS:85066018831

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optical Components and Materials XVI

A2 - Digonnet, Michel J. F.

A2 - Jiang, Shibin

PB - SPIE

T2 - Optical Components and Materials XVI 2019

Y2 - 4 February 2019 through 6 February 2019

ER -