Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2872-2875 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (A) Applications and Materials Science |
| Jahrgang | 206 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 7 Dez. 2009 |
Abstract
Mesoporous GaAs double layers with different porosities and thicknesses up to 7 μm are formed on highly doped p-type 4 inch GaAs substrates by means of electrochemical etching in highly concentrated hydrofluoric acid electrolytes. Small (111) oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5mA cm -2 are applied. Porous double layers with different porosities are obtained by varying simultaneously the etching current density and the electrolyte concentration. The porosity of the porous GaAs layers decreases nearly linearly from 69 to 53% with electrolyte concentrations increasing from 30 to 50 wt.%, respectively. The etching process increases the mean roughness of the porous layer surface from 0.15 to 0.24 nm.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Physica Status Solidi (A) Applications and Materials Science, Jahrgang 206, Nr. 12, 07.12.2009, S. 2872-2875.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Mesoporous GaAs double layers for layer transfer processes
AU - Rojas, Enrique Garralaga
AU - Terheiden, Barbara
AU - Plagwitz, Heiko
AU - Hampe, Carsten
AU - Tutuc, Daniel
AU - Haug, Rolf
AU - Brendel, Rolf
PY - 2009/12/7
Y1 - 2009/12/7
N2 - Mesoporous GaAs double layers with different porosities and thicknesses up to 7 μm are formed on highly doped p-type 4 inch GaAs substrates by means of electrochemical etching in highly concentrated hydrofluoric acid electrolytes. Small (111) oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5mA cm -2 are applied. Porous double layers with different porosities are obtained by varying simultaneously the etching current density and the electrolyte concentration. The porosity of the porous GaAs layers decreases nearly linearly from 69 to 53% with electrolyte concentrations increasing from 30 to 50 wt.%, respectively. The etching process increases the mean roughness of the porous layer surface from 0.15 to 0.24 nm.
AB - Mesoporous GaAs double layers with different porosities and thicknesses up to 7 μm are formed on highly doped p-type 4 inch GaAs substrates by means of electrochemical etching in highly concentrated hydrofluoric acid electrolytes. Small (111) oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5mA cm -2 are applied. Porous double layers with different porosities are obtained by varying simultaneously the etching current density and the electrolyte concentration. The porosity of the porous GaAs layers decreases nearly linearly from 69 to 53% with electrolyte concentrations increasing from 30 to 50 wt.%, respectively. The etching process increases the mean roughness of the porous layer surface from 0.15 to 0.24 nm.
UR - http://www.scopus.com/inward/record.url?scp=73849132898&partnerID=8YFLogxK
U2 - 10.1002/pssa.200925332
DO - 10.1002/pssa.200925332
M3 - Article
AN - SCOPUS:73849132898
VL - 206
SP - 2872
EP - 2875
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 12
ER -