Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 255-259 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica Status Solidi (A) Applied Research |
| Jahrgang | 109 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 16 Sept. 1988 |
Abstract
The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (A) Applied Research, Jahrgang 109, Nr. 1, 16.09.1988, S. 255-259.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Mechanism of voltage generation in Bi films due to laser irradiation
AU - Akhtar, S. M. Javed
AU - Ristau, Detlev
PY - 1988/9/16
Y1 - 1988/9/16
N2 - The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
AB - The mechanism of voltage generation in thin metal film detectors is investigated. For this purpose non‐oxidized Bi films of different widths and thicknesses are prepared and irradiated by a cw Nd‐Yag laser. Voltages are detected in all the samples. In order to detect nanosecond pulses, a pulsed Nd‐Yag laser is used to irradiate oxidized as well as non‐oxidized samples. Pulse lengths of 14 ns are observed by thin Bi film detectors. A theoretical calculation of voltage as a function of thickness is made by calculating the temperature rise in the Bi films and compared with the measured voltages.
UR - http://www.scopus.com/inward/record.url?scp=0024070650&partnerID=8YFLogxK
U2 - 10.1002/pssa.2211090127
DO - 10.1002/pssa.2211090127
M3 - Article
AN - SCOPUS:0024070650
VL - 109
SP - 255
EP - 259
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -