Details
| Originalsprache | Englisch |
|---|---|
| Seiten | 712-719 |
| Seitenumfang | 8 |
| Publikationsstatus | Veröffentlicht - 4 Nov. 1994 |
| Extern publiziert | Ja |
| Veranstaltung | Optical Interference Coatings 1994 - Grenoble, Frankreich Dauer: 5 Juni 1994 → 10 Juni 1994 |
Konferenz
| Konferenz | Optical Interference Coatings 1994 |
|---|---|
| Land/Gebiet | Frankreich |
| Ort | Grenoble |
| Zeitraum | 5 Juni 1994 → 10 Juni 1994 |
Abstract
Thermal conductivity of dielectric films can be measured by determining the travelling time of a thermal pulse propagating through the film. In the approach to thermal conductivity measurements described here, the energy of a laser-pulse is deposited into the test sample consisting of a totally absorbing substrate and a thin transparent test layer. As a consequence, a temperature profile builds up at the substrate-film interface. The time delay of the temperature rise at the surface of the test layer is determined by the propagation time of the thermal pulse through the layer, and is directly related to the thermal diffusivity and the thickness of the layer. Measurements were carried out with a preliminary setup and evaluated by calculations on the basis of the finite differences method. Thermal conductivity was determined for single layers of Al2O3, SiO2 and Ta2O5 films. The measurements indicate that the thermal diffusivity is dependent on the film thickness and are essentially smaller than the corresponding bulk values.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Informatik (insg.)
- Angewandte Informatik
- Mathematik (insg.)
- Angewandte Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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1994. 712-719 Beitrag in Optical Interference Coatings 1994, Grenoble, Frankreich.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - Measurement of Thermal conductivity in dielectric films by the Thermal pulse method
AU - Dieckmann, Manfred
AU - Ristau, Detlev
AU - Willamowski, Uwe
AU - Schmidt, Holger
PY - 1994/11/4
Y1 - 1994/11/4
N2 - Thermal conductivity of dielectric films can be measured by determining the travelling time of a thermal pulse propagating through the film. In the approach to thermal conductivity measurements described here, the energy of a laser-pulse is deposited into the test sample consisting of a totally absorbing substrate and a thin transparent test layer. As a consequence, a temperature profile builds up at the substrate-film interface. The time delay of the temperature rise at the surface of the test layer is determined by the propagation time of the thermal pulse through the layer, and is directly related to the thermal diffusivity and the thickness of the layer. Measurements were carried out with a preliminary setup and evaluated by calculations on the basis of the finite differences method. Thermal conductivity was determined for single layers of Al2O3, SiO2 and Ta2O5 films. The measurements indicate that the thermal diffusivity is dependent on the film thickness and are essentially smaller than the corresponding bulk values.
AB - Thermal conductivity of dielectric films can be measured by determining the travelling time of a thermal pulse propagating through the film. In the approach to thermal conductivity measurements described here, the energy of a laser-pulse is deposited into the test sample consisting of a totally absorbing substrate and a thin transparent test layer. As a consequence, a temperature profile builds up at the substrate-film interface. The time delay of the temperature rise at the surface of the test layer is determined by the propagation time of the thermal pulse through the layer, and is directly related to the thermal diffusivity and the thickness of the layer. Measurements were carried out with a preliminary setup and evaluated by calculations on the basis of the finite differences method. Thermal conductivity was determined for single layers of Al2O3, SiO2 and Ta2O5 films. The measurements indicate that the thermal diffusivity is dependent on the film thickness and are essentially smaller than the corresponding bulk values.
KW - Alumina films
KW - Silica films
KW - Tantala films
KW - Thermal conductivity
KW - Thermal pulse method
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=0342706731&partnerID=8YFLogxK
U2 - 10.1117/12.192148
DO - 10.1117/12.192148
M3 - Paper
AN - SCOPUS:0342706731
SP - 712
EP - 719
T2 - Optical Interference Coatings 1994
Y2 - 5 June 1994 through 10 June 1994
ER -