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| Originalsprache | undefiniert/unbekannt |
|---|---|
| Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 4 Okt. 2000 |
Abstract
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2000.
Publikation: Arbeitspapier/Preprint › Preprint
}
TY - UNPB
T1 - Measurement of the energy dependence of phase relaxation by single electron tunneling
AU - König, P.
AU - Könemann, J.
AU - Schmidt, T.
AU - McCann, E.
AU - Fal'ko, V. I.
AU - Haug, R. J.
N1 - 2 pages, 4 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000
PY - 2000/10/4
Y1 - 2000/10/4
N2 - Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.
AB - Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.
KW - cond-mat.mes-hall
M3 - Preprint
BT - Measurement of the energy dependence of phase relaxation by single electron tunneling
ER -