Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • B. Dietrich
  • E. Bugiel
  • J. Klatt
  • G. Lippert
  • T. Morgenstern
  • H. J. Osten
  • P. Zaumseil

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)3177-3180
Seitenumfang4
FachzeitschriftJournal of applied physics
Jahrgang74
Ausgabenummer5
PublikationsstatusVeröffentlicht - 1 Sept. 1993
Extern publiziertJa

Abstract

Epitaxial Si1-xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si-Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si 1-xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900°C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.

ASJC Scopus Sachgebiete

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Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. / Dietrich, B.; Bugiel, E.; Klatt, J. et al.
in: Journal of applied physics, Jahrgang 74, Nr. 5, 01.09.1993, S. 3177-3180.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Dietrich, B, Bugiel, E, Klatt, J, Lippert, G, Morgenstern, T, Osten, HJ & Zaumseil, P 1993, 'Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction', Journal of applied physics, Jg. 74, Nr. 5, S. 3177-3180. https://doi.org/10.1063/1.354587
Dietrich, B., Bugiel, E., Klatt, J., Lippert, G., Morgenstern, T., Osten, H. J., & Zaumseil, P. (1993). Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. Journal of applied physics, 74(5), 3177-3180. https://doi.org/10.1063/1.354587
Dietrich B, Bugiel E, Klatt J, Lippert G, Morgenstern T, Osten HJ et al. Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. Journal of applied physics. 1993 Sep 1;74(5):3177-3180. doi: 10.1063/1.354587
Dietrich, B. ; Bugiel, E. ; Klatt, J. et al. / Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction. in: Journal of applied physics. 1993 ; Jahrgang 74, Nr. 5. S. 3177-3180.
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abstract = "Epitaxial Si1-xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si-Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si 1-xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900°C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.",
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T1 - Measurement of stress and relaxation in Si1-xGex layers by Raman line shift and x-ray diffraction

AU - Dietrich, B.

AU - Bugiel, E.

AU - Klatt, J.

AU - Lippert, G.

AU - Morgenstern, T.

AU - Osten, H. J.

AU - Zaumseil, P.

PY - 1993/9/1

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N2 - Epitaxial Si1-xGex layers, grown by molecular beam epitaxy (MBE) and by chemical vapor deposition (CVD) on Si(001) substrates, with thicknesses between 20 and 50 nm and Ge contents from 4% to 23% were investigated by micro Raman backscattering, x-ray double crystal diffractometry, and transmission electron microscopy. A quite simple phenomenological model was developed to derive the Raman shift of the Si-Si mode as a function of the germanium content for the two limiting cases, the pseudomorphically strained layer, and the alloy-like stress-free layer. A measure for the degree of relaxation can be obtained from the measured Raman shift and from the independently determined germanium content, using the results of the model. The degree of relaxation was determined for a number of CVD- and MBE-grown Si 1-xGex layers. The as-grown pseudomorphic layers relax partially after annealing at 900°C. The Raman scattering allows the monitoring of the development of relaxation during the semiconductor device processing.

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