Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 031906 |
| Fachzeitschrift | Applied Physics Letters |
| Jahrgang | 100 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 19 Jan. 2012 |
Abstract
We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ fast hh of 27 ns and a second, long spin relaxation time τ slow hh which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy-hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Applied Physics Letters, Jahrgang 100, Nr. 3, 031906, 19.01.2012.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Measurement of heavy-hole spin dephasing in (InGa)As quantum dots
AU - Dahbashi, Ramin
AU - Hübner, Jens
AU - Berski, Fabian
AU - Wiegand, Julia
AU - Marie, Xavier
AU - Pierz, Klaus
AU - Schumacher, H. W.
AU - Oestreich, Michael
N1 - Funding information: We gratefully acknowledge the excellent technical support by R. Hüther and financial support by the BMBF joint research project QuaHL-Rep, the Deutsche Forschungsgemeinschaft in the framework of the priority program “SPP 1285—Semiconductor Spintronics,” and the excellence cluster “QUEST—Center for Quantum Engineering and Space-Time Research”.
PY - 2012/1/19
Y1 - 2012/1/19
N2 - We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ fast hh of 27 ns and a second, long spin relaxation time τ slow hh which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy-hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.
AB - We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ fast hh of 27 ns and a second, long spin relaxation time τ slow hh which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy-hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.
UR - http://www.scopus.com/inward/record.url?scp=84856474985&partnerID=8YFLogxK
U2 - 10.1063/1.3678182
DO - 10.1063/1.3678182
M3 - Article
AN - SCOPUS:84856474985
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 031906
ER -