Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 612 |
| Fachzeitschrift | Nature Communications |
| Jahrgang | 3 |
| Publikationsstatus | Veröffentlicht - 13 Feb. 2012 |
Abstract
Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Biochemie, Genetik und Molekularbiologie (insg.)
- Allgemeine Biochemie, Genetik und Molekularbiologie
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Nature Communications, Jahrgang 3, 612, 13.02.2012.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Measurement of finite-frequency current statistics in a single-electron transistor
AU - Ubbelohde, Niels
AU - Fricke, Christian
AU - Flindt, Christian
AU - Hohls, Frank
AU - Haug, Rolf J.
N1 - Funding information: We thank M. Büttiker, C. Emary, and Yu. V. Nazarov for instructive discussions. W. Wegscheider (Regensburg, Germany) provided the wafer and B. Harke (Hannover, Germany) fabricated the device. The work was supported by BMBF through nanoQUIT (C. Fr., N. U., F. H., and R. J. H.), DFG through QUEST (C. Fr., N. U., F. H., and R. J. H.), the Villum Kann Rasmussen Foundation (C. Fl.), and the Swiss NSF (C. Fl.).
PY - 2012/2/13
Y1 - 2012/2/13
N2 - Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.
AB - Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.
UR - http://www.scopus.com/inward/record.url?scp=84856711992&partnerID=8YFLogxK
U2 - 10.1038/ncomms1620
DO - 10.1038/ncomms1620
M3 - Article
AN - SCOPUS:84856711992
VL - 3
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 612
ER -