Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 18-24 |
| Seitenumfang | 7 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 278 |
| Ausgabenummer | 1-4 |
| Frühes Online-Datum | 26 Jan. 2005 |
| Publikationsstatus | Veröffentlicht - 1 Mai 2005 |
| Veranstaltung | 13th International Conference on Molecular Beam Epitaxy - Dauer: 22 Aug. 2004 → 27 Aug. 2004 |
Abstract
Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number of fundamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness. This has induced an urgent search for alternative dielectric materials (high-κ dielectrics). The common approach has involved amorphous materials with higher dielectric constants, such as metal oxides and their silicates. The problem here is to keep the material amorphous even after post-deposition high-temperature processing. A different approach is based on the development of epitaxial metal oxides grown directly on silicon surfaces. An epitaxial oxide involves more effort, but it has the advantages of enabling defined interface engineering and higher thermal stability. MBE is known for its superior capability in atomic level engineering and interface control, and is one of the techniques being investigated for the epitaxial growth of various high-κ materials.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 278, Nr. 1-4, 01.05.2005, S. 18-24.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - MBE growth and properties of epitaxial metal oxides for high-κ dielectrics
AU - Osten, H. Jörg
AU - Bugiel, E.
AU - Kirfel, O.
AU - Czernohorsky, M.
AU - Fissel, A.
N1 - Funding Information: This work was partly funded by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D). Part of the work has been realized during a stay at IHP in Frankfurt (Oder), Germany. The authors would like to thank various members of IHP for their contributions as well as for stimulating discussions.
PY - 2005/5/1
Y1 - 2005/5/1
N2 - Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number of fundamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness. This has induced an urgent search for alternative dielectric materials (high-κ dielectrics). The common approach has involved amorphous materials with higher dielectric constants, such as metal oxides and their silicates. The problem here is to keep the material amorphous even after post-deposition high-temperature processing. A different approach is based on the development of epitaxial metal oxides grown directly on silicon surfaces. An epitaxial oxide involves more effort, but it has the advantages of enabling defined interface engineering and higher thermal stability. MBE is known for its superior capability in atomic level engineering and interface control, and is one of the techniques being investigated for the epitaxial growth of various high-κ materials.
AB - Aggressive reduction in the thickness of SiO2-based gate dielectrics in ULSI devices brings about a number of fundamental problems, the most critical ones being reduced dielectric reliability and exponentially increasing leakage (tunneling) current with decreasing oxide thickness. This has induced an urgent search for alternative dielectric materials (high-κ dielectrics). The common approach has involved amorphous materials with higher dielectric constants, such as metal oxides and their silicates. The problem here is to keep the material amorphous even after post-deposition high-temperature processing. A different approach is based on the development of epitaxial metal oxides grown directly on silicon surfaces. An epitaxial oxide involves more effort, but it has the advantages of enabling defined interface engineering and higher thermal stability. MBE is known for its superior capability in atomic level engineering and interface control, and is one of the techniques being investigated for the epitaxial growth of various high-κ materials.
KW - A3. Molecular beam epitaxy
KW - B1. Oxides
KW - B1. Rare-earth compounds
KW - B2. Dielectric materials
UR - http://www.scopus.com/inward/record.url?scp=18444396643&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.12.051
DO - 10.1016/j.jcrysgro.2004.12.051
M3 - Conference article
AN - SCOPUS:18444396643
VL - 278
SP - 18
EP - 24
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
T2 - 13th International Conference on Molecular Beam Epitaxy
Y2 - 22 August 2004 through 27 August 2004
ER -