Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 192-196 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica B: Physics of Condensed Matter |
| Jahrgang | 184 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - Feb. 1993 |
| Extern publiziert | Ja |
Abstract
In an AlGaAs/GaAs heterostructure magnetotransport has been measured along an edge which can be influenced by an in-plane-gate. The in-plane-gate has been produced by writing an isolating line with a focused-ion beam of 100 keV Ga+-ions. A drastic increase of the amplitude of the Shubnikov-de Haas oscillations is observed for positive gate voltages applied to the in-plane-gate. This increase in amplitude is attributed to an increased coupling between edge states due to a decreased distance to the scattering centers generated by the focused-ion beam.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica B: Physics of Condensed Matter, Jahrgang 184, Nr. 1-4, 02.1993, S. 192-196.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Magnetotransport properties of hall-bar with focused-ion-beam written in-plane-gate
AU - Haug, R. J.
AU - Wieck, A. D.
AU - von Klitzing, K.
AU - Ploog, K.
N1 - Funding information: Valuabled iscussionws ith T. Bever, R.R. Ger-hardts and A.H. MacDonald are gratefullya c-knowledgedP. art of this work has been supported by the Bundesministeriufm/Jr Forschung und Technologie.
PY - 1993/2
Y1 - 1993/2
N2 - In an AlGaAs/GaAs heterostructure magnetotransport has been measured along an edge which can be influenced by an in-plane-gate. The in-plane-gate has been produced by writing an isolating line with a focused-ion beam of 100 keV Ga+-ions. A drastic increase of the amplitude of the Shubnikov-de Haas oscillations is observed for positive gate voltages applied to the in-plane-gate. This increase in amplitude is attributed to an increased coupling between edge states due to a decreased distance to the scattering centers generated by the focused-ion beam.
AB - In an AlGaAs/GaAs heterostructure magnetotransport has been measured along an edge which can be influenced by an in-plane-gate. The in-plane-gate has been produced by writing an isolating line with a focused-ion beam of 100 keV Ga+-ions. A drastic increase of the amplitude of the Shubnikov-de Haas oscillations is observed for positive gate voltages applied to the in-plane-gate. This increase in amplitude is attributed to an increased coupling between edge states due to a decreased distance to the scattering centers generated by the focused-ion beam.
UR - http://www.scopus.com/inward/record.url?scp=0027541588&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(93)90347-9
DO - 10.1016/0921-4526(93)90347-9
M3 - Article
AN - SCOPUS:0027541588
VL - 184
SP - 192
EP - 196
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 1-4
ER -