Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 1800525 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 256 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - 6 Juni 2019 |
Abstract
The effect of magnetic field on electron transport in graphene monolayers with various levels of impurity doping is studied. In samples with low impurity doping a square root magnetoresistance appears away from the Dirac point and no such magnetoresistance is observed in low mobility monolayers with high impurity doping. The difference in magnetoresistance is attributed to different types of scattering mechanisms in various samples. Our data for graphene monolayers with low impurity concentration shows a good agreement with theory over a wide range of magnetic fields.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 256, Nr. 6, 1800525, 06.06.2019.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
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TY - JOUR
T1 - Magnetoresistance of Monolayer Graphene With Short-Range Disorder
AU - Vasileva, Galina
AU - Alekseev, Pavel
AU - Vasilyev, Yuri
AU - Dmitriev, Alexander
AU - Kachorovskii, Valentin
AU - Smirnov, Dmitri
AU - Schmidt, Hennrik
AU - Haug, Rolf
N1 - Funding information: We thank I.V. Gornyi for fruitful discussions. G.Yu.V. acknowledges funding from Russian Science Foundation project 17-72-10134. The work was supported by DFG Priority Programme “Graphene” (SPP 1459); by the grant of the Foundation for the Development of Theoretical Physics “BASIS”; by the Russian Foundation for Basic Research, projects # 16-02-01166-a, 17-02-00217-a, 18-02-01016-a; by the Presidium of the Russian Academy of Sciences; and by the Ministry of Education and Science of the Russian Federation (Contract no. 14.Z50.31.0021, Leading scientist: M. Bayer).
PY - 2019/6/6
Y1 - 2019/6/6
N2 - The effect of magnetic field on electron transport in graphene monolayers with various levels of impurity doping is studied. In samples with low impurity doping a square root magnetoresistance appears away from the Dirac point and no such magnetoresistance is observed in low mobility monolayers with high impurity doping. The difference in magnetoresistance is attributed to different types of scattering mechanisms in various samples. Our data for graphene monolayers with low impurity concentration shows a good agreement with theory over a wide range of magnetic fields.
AB - The effect of magnetic field on electron transport in graphene monolayers with various levels of impurity doping is studied. In samples with low impurity doping a square root magnetoresistance appears away from the Dirac point and no such magnetoresistance is observed in low mobility monolayers with high impurity doping. The difference in magnetoresistance is attributed to different types of scattering mechanisms in various samples. Our data for graphene monolayers with low impurity concentration shows a good agreement with theory over a wide range of magnetic fields.
KW - disorder
KW - magnetotransport
KW - monolayer graphene
UR - http://www.scopus.com/inward/record.url?scp=85062346851&partnerID=8YFLogxK
U2 - 10.1002/pssb.201800525
DO - 10.1002/pssb.201800525
M3 - Article
AN - SCOPUS:85062346851
VL - 256
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 6
M1 - 1800525
ER -