Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

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OriginalspracheEnglisch
Aufsatznummer012003
FachzeitschriftJournal of Physics: Conference Series
Jahrgang456
Ausgabenummer1
PublikationsstatusVeröffentlicht - 5 Aug. 2013
Veranstaltung20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012 - Chamonix Mont Blanc, Frankreich
Dauer: 22 Juli 201227 Juli 2012

Abstract

In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs / Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.

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Zitieren

Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry. / Bockhorn, L.; Hodaei, A.; Schuh, D. et al.
in: Journal of Physics: Conference Series, Jahrgang 456, Nr. 1, 012003, 05.08.2013.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Bockhorn L, Hodaei A, Schuh D, Wegscheider W, Haug RJ. Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry. Journal of Physics: Conference Series. 2013 Aug 5;456(1):012003. doi: 10.1088/1742-6596/456/1/012003
Bockhorn, L. ; Hodaei, A. ; Schuh, D. et al. / Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry. in: Journal of Physics: Conference Series. 2013 ; Jahrgang 456, Nr. 1.
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AU - Haug, R. J.

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