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Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • U. Zeitler
  • H. W. Schumacher
  • A. G.M. Jansen
  • R. J. Haug

Organisationseinheiten

Externe Organisationen

  • Université Paris XI
  • Centre national de la recherche scientifique (CNRS)
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    • Citation Indexes: 46
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Details

OriginalspracheEnglisch
Seiten (von - bis)866-869
Seitenumfang4
FachzeitschriftPhysical review letters
Jahrgang86
Ausgabenummer5
PublikationsstatusVeröffentlicht - 29 Jan. 2001

Abstract

The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. The anisotropies were caused by the formation of a unidirectional stripe phase from two Landau levels with opposite spin of electrons.

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Zitieren

Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation. / Zeitler, U.; Schumacher, H. W.; Jansen, A. G.M. et al.
in: Physical review letters, Jahrgang 86, Nr. 5, 29.01.2001, S. 866-869.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Zeitler U, Schumacher HW, Jansen AGM, Haug RJ. Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation. Physical review letters. 2001 Jan 29;86(5):866-869. doi: 10.1103/PhysRevLett.86.866
Zeitler, U. ; Schumacher, H. W. ; Jansen, A. G.M. et al. / Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields : Experimental evidence for a stripe-phase formation. in: Physical review letters. 2001 ; Jahrgang 86, Nr. 5. S. 866-869.
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