Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • P. D. Wang
  • J. L. Merz
  • S. Fafard
  • R. Leon
  • D. Leonard
  • G. Medeiros-Ribeiro
  • Michael Oestreich
  • P. M. Petroff
  • N. N. Ledentsov
  • P. S. Kop'ev
  • V. M. Ustinov
  • K. Uchida
  • N. Miura
  • H. Akiyama
  • H. Sakaki
  • C. M. Sotomayor Torres

Externe Organisationen

  • University of Notre Dame
  • University of California at Santa Barbara
  • National Research Council of Canada
  • Australian National University
  • RAS - Ioffe Physico Technical Institute
  • University of Tokyo (UTokyo)
  • University of Glasgow
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Details

OriginalspracheEnglisch
Seiten (von - bis)378-383
Seitenumfang6
FachzeitschriftPhysica B: Condensed Matter
Jahrgang227
Ausgabenummer1-4
PublikationsstatusVeröffentlicht - Sept. 1996
Extern publiziertJa

Abstract

We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.

ASJC Scopus Sachgebiete

Zitieren

Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices. / Wang, P. D.; Merz, J. L.; Fafard, S. et al.
in: Physica B: Condensed Matter, Jahrgang 227, Nr. 1-4, 09.1996, S. 378-383.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Wang, PD, Merz, JL, Fafard, S, Leon, R, Leonard, D, Medeiros-Ribeiro, G, Oestreich, M, Petroff, PM, Ledentsov, NN, Kop'ev, PS, Ustinov, VM, Uchida, K, Miura, N, Akiyama, H, Sakaki, H & Sotomayor Torres, CM 1996, 'Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices', Physica B: Condensed Matter, Jg. 227, Nr. 1-4, S. 378-383. https://doi.org/10.1016/0921-4526(96)00447-4
Wang, P. D., Merz, J. L., Fafard, S., Leon, R., Leonard, D., Medeiros-Ribeiro, G., Oestreich, M., Petroff, P. M., Ledentsov, N. N., Kop'ev, P. S., Ustinov, V. M., Uchida, K., Miura, N., Akiyama, H., Sakaki, H., & Sotomayor Torres, C. M. (1996). Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices. Physica B: Condensed Matter, 227(1-4), 378-383. https://doi.org/10.1016/0921-4526(96)00447-4
Wang PD, Merz JL, Fafard S, Leon R, Leonard D, Medeiros-Ribeiro G et al. Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices. Physica B: Condensed Matter. 1996 Sep;227(1-4):378-383. doi: 10.1016/0921-4526(96)00447-4
Wang, P. D. ; Merz, J. L. ; Fafard, S. et al. / Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices. in: Physica B: Condensed Matter. 1996 ; Jahrgang 227, Nr. 1-4. S. 378-383.
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title = "Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices",
abstract = "We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.",
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author = "Wang, {P. D.} and Merz, {J. L.} and S. Fafard and R. Leon and D. Leonard and G. Medeiros-Ribeiro and Michael Oestreich and Petroff, {P. M.} and Ledentsov, {N. N.} and Kop'ev, {P. S.} and Ustinov, {V. M.} and K. Uchida and N. Miura and H. Akiyama and H. Sakaki and {Sotomayor Torres}, {C. M.}",
note = "Funding information: Support from QUEST, an NSF Science and Technology Center for Quantized Electronic Structures (Grant No. DMR 91-20007), and the NSF International Program (Grant No. INT 93-21727), the IN-TAS (Grant No. 94-481 ) and the UK EPSRC (Grant GR/J90718) is gratefully acknowledged.",
year = "1996",
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doi = "10.1016/0921-4526(96)00447-4",
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volume = "227",
pages = "378--383",
journal = "Physica B: Condensed Matter",
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Download

TY - JOUR

T1 - Magneto-optical properties of InAs monolayers and InyAl1-yAs self-assembled quantum dots in Ga(Al)As matrices

AU - Wang, P. D.

AU - Merz, J. L.

AU - Fafard, S.

AU - Leon, R.

AU - Leonard, D.

AU - Medeiros-Ribeiro, G.

AU - Oestreich, Michael

AU - Petroff, P. M.

AU - Ledentsov, N. N.

AU - Kop'ev, P. S.

AU - Ustinov, V. M.

AU - Uchida, K.

AU - Miura, N.

AU - Akiyama, H.

AU - Sakaki, H.

AU - Sotomayor Torres, C. M.

N1 - Funding information: Support from QUEST, an NSF Science and Technology Center for Quantized Electronic Structures (Grant No. DMR 91-20007), and the NSF International Program (Grant No. INT 93-21727), the IN-TAS (Grant No. 94-481 ) and the UK EPSRC (Grant GR/J90718) is gratefully acknowledged.

PY - 1996/9

Y1 - 1996/9

N2 - We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.

AB - We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 meV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.

KW - InAlAs-AlGaAs

KW - Inas-GaAs

KW - Self-assembled quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0030232264&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(96)00447-4

DO - 10.1016/0921-4526(96)00447-4

M3 - Article

AN - SCOPUS:0030232264

VL - 227

SP - 378

EP - 383

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -

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