Magnetoelectronics enhance memory

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OriginalspracheEnglisch
Seiten20-21
Seitenumfang2
Band16
Ausgabenummer12
FachzeitschriftPhysics World
PublikationsstatusVeröffentlicht - Dez. 2003

Abstract

Currently, magnetic random access memory (MRAM) is the hot candidate to replace conventional dynamic random access memory (DRAM). Researchers at the Paul Drude Institute for Solid State Electronics in Berlin have now proposed an exciting way to use MRAMs to perform logic operations. They showed that a single MRAM cell can be programmed in real time to work as any one of four logical gates: AND, OR, NAND or NOR. Such a device promises a reduction in chip size and a significant increase in computational power because every single logical cell can perform any computational task.

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Magnetoelectronics enhance memory. / Hägele, Daniel; Oestreich, Michael.
in: Physics World, Jahrgang 16, Nr. 12, 12.2003, S. 20-21.

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Hägele D, Oestreich M. Magnetoelectronics enhance memory. Physics World. 2003 Dez;16(12):20-21. doi: 10.1088/2058-7058/16/12/30
Hägele, Daniel ; Oestreich, Michael. / Magnetoelectronics enhance memory. in: Physics World. 2003 ; Jahrgang 16, Nr. 12. S. 20-21.
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