Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 59-61 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 1 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 19 Jan. 1997 |
| Extern publiziert | Ja |
Abstract
By the method of capacitance spectroscopy and of magnetotransport we have investigated the v = 1/3 and 2/3 fractional-quantum-Hall-effect (FQHE) states in gated GaAs/AlGaAs heterojunctions with tuned electron areal density. Our experimental results confirm the theoretical prediction of the fractional quasiparticle charge e* = e/3 in the v = 1/3 FQHE state and of the existence of spin-aligned quasiholes and spin-reversed quasielectrons in the fully spin-polarized v = 2/3 FQHE state.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 1, Nr. 1-4, 19.01.1997, S. 59-61.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Magnetocapacitance study of the fractional-quantum-Hall effect
T2 - Quasiparticle charge and spin polarization
AU - Dorozhkin, S. I.
AU - Dorokhova, M. O.
AU - Haug, R. J.
AU - Ploog, K.
N1 - Funding information: This work was supported by INTAS-RFBR grant 95-0576 and by national grant of RFBR. One of us (M.O.D.) gratefully acknowledges a fellowship from the Soros Foundation.
PY - 1997/1/19
Y1 - 1997/1/19
N2 - By the method of capacitance spectroscopy and of magnetotransport we have investigated the v = 1/3 and 2/3 fractional-quantum-Hall-effect (FQHE) states in gated GaAs/AlGaAs heterojunctions with tuned electron areal density. Our experimental results confirm the theoretical prediction of the fractional quasiparticle charge e* = e/3 in the v = 1/3 FQHE state and of the existence of spin-aligned quasiholes and spin-reversed quasielectrons in the fully spin-polarized v = 2/3 FQHE state.
AB - By the method of capacitance spectroscopy and of magnetotransport we have investigated the v = 1/3 and 2/3 fractional-quantum-Hall-effect (FQHE) states in gated GaAs/AlGaAs heterojunctions with tuned electron areal density. Our experimental results confirm the theoretical prediction of the fractional quasiparticle charge e* = e/3 in the v = 1/3 FQHE state and of the existence of spin-aligned quasiholes and spin-reversed quasielectrons in the fully spin-polarized v = 2/3 FQHE state.
KW - Fractional quantum Hall effect
KW - Spin polarization
UR - http://www.scopus.com/inward/record.url?scp=0031375280&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(97)00011-8
DO - 10.1016/S1386-9477(97)00011-8
M3 - Article
AN - SCOPUS:0031375280
VL - 1
SP - 59
EP - 61
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
ER -