Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | PHYSICS OF SEMICONDUCTORS |
| Untertitel | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
| Seiten | 467-468 |
| Seitenumfang | 2 |
| Publikationsstatus | Veröffentlicht - 2 Aug. 2005 |
| Veranstaltung | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, USA / Vereinigte Staaten Dauer: 26 Juli 2004 → 30 Juli 2004 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 772 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. S. 467-468 (AIP Conference Proceedings; Band 772).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields
AU - Wilde, M. A.
AU - Rhode, M.
AU - Heyn, Ch
AU - Schäffler, F.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Heitmann, D.
AU - Grundler, D.
PY - 2005/8/2
Y1 - 2005/8/2
N2 - We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.
AB - We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder.
UR - http://www.scopus.com/inward/record.url?scp=33749479245&partnerID=8YFLogxK
U2 - 10.1063/1.1994186
DO - 10.1063/1.1994186
M3 - Conference contribution
AN - SCOPUS:33749479245
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 467
EP - 468
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -