Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6472253 |
| Seiten (von - bis) | 723-729 |
| Seitenumfang | 7 |
| Fachzeitschrift | IEEE journal of photovoltaics |
| Jahrgang | 3 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 7 März 2013 |
Abstract
In this paper, we separate a macroporous silicon absorber from a monocrystalline n-type silicon wafer by means of electrochemical etching. The porosity is (31 ± 3)%. The epitaxial growth of a p +-type Si layer onto one side of the macroporous silicon substrate forms a pn-junction that covers the full outer and inner surface of the macroporous layer. Epitaxy reduces the porosity to (19 ± 2)%. The thickness of the epitaxial layer is (3.0 ± 0.2) μm on the rear side and (0.4 ± 0.1) μm on the pore walls. We process (35 ± 2)-μm-thick macroporous silicon solar cells with an aperture area of 2.25 cm 2. The short-circuit current density is 37.1 mA cm -2, and the open-circuit voltage is 544 mV. A fill factor of 65.1% limits the energy-conversion efficiency to 13.1%.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 3, Nr. 2, 6472253, 07.03.2013, S. 723-729.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Macroporous Silicon Solar Cells With an Epitaxial Emitter
AU - Ernst, Marco
AU - Brendel, Rolf
PY - 2013/3/7
Y1 - 2013/3/7
N2 - In this paper, we separate a macroporous silicon absorber from a monocrystalline n-type silicon wafer by means of electrochemical etching. The porosity is (31 ± 3)%. The epitaxial growth of a p +-type Si layer onto one side of the macroporous silicon substrate forms a pn-junction that covers the full outer and inner surface of the macroporous layer. Epitaxy reduces the porosity to (19 ± 2)%. The thickness of the epitaxial layer is (3.0 ± 0.2) μm on the rear side and (0.4 ± 0.1) μm on the pore walls. We process (35 ± 2)-μm-thick macroporous silicon solar cells with an aperture area of 2.25 cm 2. The short-circuit current density is 37.1 mA cm -2, and the open-circuit voltage is 544 mV. A fill factor of 65.1% limits the energy-conversion efficiency to 13.1%.
AB - In this paper, we separate a macroporous silicon absorber from a monocrystalline n-type silicon wafer by means of electrochemical etching. The porosity is (31 ± 3)%. The epitaxial growth of a p +-type Si layer onto one side of the macroporous silicon substrate forms a pn-junction that covers the full outer and inner surface of the macroporous layer. Epitaxy reduces the porosity to (19 ± 2)%. The thickness of the epitaxial layer is (3.0 ± 0.2) μm on the rear side and (0.4 ± 0.1) μm on the pore walls. We process (35 ± 2)-μm-thick macroporous silicon solar cells with an aperture area of 2.25 cm 2. The short-circuit current density is 37.1 mA cm -2, and the open-circuit voltage is 544 mV. A fill factor of 65.1% limits the energy-conversion efficiency to 13.1%.
KW - Epitaxy
KW - kerf-free
KW - layer transfer
KW - macroporous silicon
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=84875598305&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2013.2247094
DO - 10.1109/JPHOTOV.2013.2247094
M3 - Article
AN - SCOPUS:84875598305
VL - 3
SP - 723
EP - 729
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 2
M1 - 6472253
ER -