Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 40-42 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 4 |
| Ausgabenummer | 1-2 |
| Publikationsstatus | Veröffentlicht - 4 Feb. 2010 |
Abstract
We separate 15 μm to 32 μm thick macroporous Si films from n-type crystalline Si wafers by electrochemical etching under back-side illumination. These layers are surface passivated and have openings in the oxide, for local doping and contacting, over 1% of the cell area. We measure effective lifetimes within a range of 2 to 3 μs. With an analytical model for the effective lifetime in macroporous Si we find an average surface recombination velocity of 75 cm/s, dominantly caused by the contact openings. The measured optical absorption of a 26 μm thick layer allows for a maximum short circuit current density of 37 mA/cm2. The potential efficiency with the current surface passivation quality is 17%. The mate- rial loss for separating the macroporous absorber from the wafer is 5 μm.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica Status Solidi - Rapid Research Letters, Jahrgang 4, Nr. 1-2, 04.02.2010, S. 40-42.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Macroporous Si as an absorber for thin-film solar cells
AU - Brendel, Rolf
AU - Ernst, Marco
N1 - Funding Information: This work is supported by the Federal Ministry for Environment, Nature Conservation and Nuclear Safety under the contract FKZ 0325147.
PY - 2010/2/4
Y1 - 2010/2/4
N2 - We separate 15 μm to 32 μm thick macroporous Si films from n-type crystalline Si wafers by electrochemical etching under back-side illumination. These layers are surface passivated and have openings in the oxide, for local doping and contacting, over 1% of the cell area. We measure effective lifetimes within a range of 2 to 3 μs. With an analytical model for the effective lifetime in macroporous Si we find an average surface recombination velocity of 75 cm/s, dominantly caused by the contact openings. The measured optical absorption of a 26 μm thick layer allows for a maximum short circuit current density of 37 mA/cm2. The potential efficiency with the current surface passivation quality is 17%. The mate- rial loss for separating the macroporous absorber from the wafer is 5 μm.
AB - We separate 15 μm to 32 μm thick macroporous Si films from n-type crystalline Si wafers by electrochemical etching under back-side illumination. These layers are surface passivated and have openings in the oxide, for local doping and contacting, over 1% of the cell area. We measure effective lifetimes within a range of 2 to 3 μs. With an analytical model for the effective lifetime in macroporous Si we find an average surface recombination velocity of 75 cm/s, dominantly caused by the contact openings. The measured optical absorption of a 26 μm thick layer allows for a maximum short circuit current density of 37 mA/cm2. The potential efficiency with the current surface passivation quality is 17%. The mate- rial loss for separating the macroporous absorber from the wafer is 5 μm.
UR - http://www.scopus.com/inward/record.url?scp=76449118132&partnerID=8YFLogxK
U2 - 10.1002/pssr.200903372
DO - 10.1002/pssr.200903372
M3 - Article
AN - SCOPUS:76449118132
VL - 4
SP - 40
EP - 42
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 1-2
ER -