Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Shawutijiang Sidikejiang
  • Philipp Henning
  • Philipp Horenburg
  • Heiko Bremers
  • Uwe Rossow
  • Dirk Menzel
  • Andreas Hangleiter

Organisationseinheiten

Externe Organisationen

  • Technische Universität Braunschweig
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer035017
Seiten (von - bis)035017
FachzeitschriftSemiconductor Science and Technology
Jahrgang37
Ausgabenummer3
PublikationsstatusVeröffentlicht - 31 Jan. 2022

Abstract

We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.

ASJC Scopus Sachgebiete

Zitieren

Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions. / Sidikejiang, Shawutijiang; Henning, Philipp; Horenburg, Philipp et al.
in: Semiconductor Science and Technology, Jahrgang 37, Nr. 3, 035017, 31.01.2022, S. 035017.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Sidikejiang, S, Henning, P, Horenburg, P, Bremers, H, Rossow, U, Menzel, D & Hangleiter, A 2022, 'Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions', Semiconductor Science and Technology, Jg. 37, Nr. 3, 035017, S. 035017. https://doi.org/10.1088/1361-6641/ac4b89
Sidikejiang, S., Henning, P., Horenburg, P., Bremers, H., Rossow, U., Menzel, D., & Hangleiter, A. (2022). Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions. Semiconductor Science and Technology, 37(3), 035017. Artikel 035017. https://doi.org/10.1088/1361-6641/ac4b89
Sidikejiang S, Henning P, Horenburg P, Bremers H, Rossow U, Menzel D et al. Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions. Semiconductor Science and Technology. 2022 Jan 31;37(3):035017. 035017. doi: 10.1088/1361-6641/ac4b89
Sidikejiang, Shawutijiang ; Henning, Philipp ; Horenburg, Philipp et al. / Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions. in: Semiconductor Science and Technology. 2022 ; Jahrgang 37, Nr. 3. S. 035017.
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title = "Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions",
abstract = "We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.",
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T1 - Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

AU - Sidikejiang, Shawutijiang

AU - Henning, Philipp

AU - Horenburg, Philipp

AU - Bremers, Heiko

AU - Rossow, Uwe

AU - Menzel, Dirk

AU - Hangleiter, Andreas

N1 - Publisher Copyright: © 2022 The Author(s). Published by IOP Publishing Ltd.

PY - 2022/1/31

Y1 - 2022/1/31

N2 - We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% internal quantum efficiency (IQE) in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a 'Reference', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.

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