Low-temperature hysteresis in the field effect of bilayer graphene

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OriginalspracheEnglisch
Aufsatznummer043020
FachzeitschriftNew journal of physics
Jahrgang13
PublikationsstatusVeröffentlicht - 1 Apr. 2011

Abstract

Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant.

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Low-temperature hysteresis in the field effect of bilayer graphene. / Barthold, P.; Lüdtke, T.; Schmidt, H. et al.
in: New journal of physics, Jahrgang 13, 043020, 01.04.2011.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Barthold P, Lüdtke T, Schmidt H, Haug RJ. Low-temperature hysteresis in the field effect of bilayer graphene. New journal of physics. 2011 Apr 1;13:043020. doi: 10.1088/1367-2630/13/4/043020
Barthold, P. ; Lüdtke, T. ; Schmidt, H. et al. / Low-temperature hysteresis in the field effect of bilayer graphene. in: New journal of physics. 2011 ; Jahrgang 13.
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@article{ad893ca043cb4dd2a9fa33c4ab122b02,
title = "Low-temperature hysteresis in the field effect of bilayer graphene",
abstract = "Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant.",
author = "P. Barthold and T. L{\"u}dtke and H. Schmidt and Haug, {R. J.}",
year = "2011",
month = apr,
day = "1",
doi = "10.1088/1367-2630/13/4/043020",
language = "English",
volume = "13",
journal = "New journal of physics",
issn = "1367-2630",
publisher = "IOP Publishing Ltd.",

}

Download

TY - JOUR

T1 - Low-temperature hysteresis in the field effect of bilayer graphene

AU - Barthold, P.

AU - Lüdtke, T.

AU - Schmidt, H.

AU - Haug, R. J.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant.

AB - Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant.

UR - http://www.scopus.com/inward/record.url?scp=79955389289&partnerID=8YFLogxK

U2 - 10.1088/1367-2630/13/4/043020

DO - 10.1088/1367-2630/13/4/043020

M3 - Article

AN - SCOPUS:79955389289

VL - 13

JO - New journal of physics

JF - New journal of physics

SN - 1367-2630

M1 - 043020

ER -

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