Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Kankat Ghosh
  • Sudipta Das
  • Andreas Fissel
  • H. Jörg Osten
  • Apurba Laha

Organisationseinheiten

Externe Organisationen

  • Indian Institute of Technology Bombay (IITB)
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Details

OriginalspracheEnglisch
Aufsatznummer7480385
Seiten (von - bis)2852-2857
Seitenumfang6
FachzeitschriftIEEE Transactions on Electron Devices
Jahrgang63
Ausgabenummer7
Frühes Online-Datum27 Mai 2016
PublikationsstatusVeröffentlicht - Juli 2016

Abstract

The (Nd1-xGdx)2O3 thin films were grown on Si(001) in 2005 using molecular beam epitaxy followed by an in vacuo metallization of Pt contacts. Pt/(Nd1-xGdx)2O3/Si(001) metal-oxide-semiconductor structures have been characterized several times over the period of 2005-2015 in order to investigate the stability of their physical and electrical properties. Core-level X-ray photoelectron spectroscopy (XPS) spectra remeasured during 2015 depict that the layer still retains its original properties that were measured in 2005. Although there has been some degradation of electrical properties such as capacitance and leakage current over several years, interestingly the midgap density of interface traps' (Dit) value has been found to be decreased from 1.1 × 1012 to 3.5 × 1011 eV-1 cm -2 over the years. The formation of silicate-like interface inferred from XPS measurements can be attributed to such an improvement over this period. Time-dependent dielectric breakdown measurements under constant current stress and constant voltage stress were also carried out to investigate the reliability of the structure.

ASJC Scopus Sachgebiete

Zitieren

Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices. / Ghosh, Kankat; Das, Sudipta; Fissel, Andreas et al.
in: IEEE Transactions on Electron Devices, Jahrgang 63, Nr. 7, 7480385, 07.2016, S. 2852-2857.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Ghosh K, Das S, Fissel A, Osten HJ, Laha A. Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices. IEEE Transactions on Electron Devices. 2016 Jul;63(7):2852-2857. 7480385. Epub 2016 Mai 27. doi: 10.1109/TED.2016.2566681
Ghosh, Kankat ; Das, Sudipta ; Fissel, Andreas et al. / Long-Term Stability of Epitaxial (Nd1-xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices. in: IEEE Transactions on Electron Devices. 2016 ; Jahrgang 63, Nr. 7. S. 2852-2857.
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abstract = "The (Nd1-xGdx)2O3 thin films were grown on Si(001) in 2005 using molecular beam epitaxy followed by an in vacuo metallization of Pt contacts. Pt/(Nd1-xGdx)2O3/Si(001) metal-oxide-semiconductor structures have been characterized several times over the period of 2005-2015 in order to investigate the stability of their physical and electrical properties. Core-level X-ray photoelectron spectroscopy (XPS) spectra remeasured during 2015 depict that the layer still retains its original properties that were measured in 2005. Although there has been some degradation of electrical properties such as capacitance and leakage current over several years, interestingly the midgap density of interface traps' (Dit) value has been found to be decreased from 1.1 × 1012 to 3.5 × 1011 eV-1 cm -2 over the years. The formation of silicate-like interface inferred from XPS measurements can be attributed to such an improvement over this period. Time-dependent dielectric breakdown measurements under constant current stress and constant voltage stress were also carried out to investigate the reliability of the structure.",
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AU - Das, Sudipta

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