Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 931-933 |
| Seitenumfang | 3 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 150 |
| Publikationsstatus | Veröffentlicht - 1 Mai 1995 |
| Extern publiziert | Ja |
Abstract
We show that it is possible to adjust the strain in pseudomorphic SiGe layers on Si(001) by adding small amounts of carbon. A strain-free Si1−x−yGexCy layer can be grown on Si(001) by choosing the concentrations x and y such that the volume changes due to the germanium and carbon atoms compensate. The local atomic structure and lattice dynamics of a strain-compensated layer are studied. Experimental and theoretical results are compatible with Vegard's rule. To handle the large bond length distortion near C atoms properly, the used valence-force field model includes anharmonic effects via bond length dependent interatomic force constants which were determined from ab initio density-functional calculations. The dependence of Raman spectra on strain and composition of Si1−x−yGexCy layers can be explained by the model calculations.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 150, 01.05.1995, S. 931-933.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Local structure of strain-compensated epitaxial Si1−x−yGexCy layers on Si(001) grown with molecular beam epitaxy
AU - Osten, H. J.
AU - Dietrich, B.
AU - Rücker, H.
AU - Methfessel, M.
PY - 1995/5/1
Y1 - 1995/5/1
N2 - We show that it is possible to adjust the strain in pseudomorphic SiGe layers on Si(001) by adding small amounts of carbon. A strain-free Si1−x−yGexCy layer can be grown on Si(001) by choosing the concentrations x and y such that the volume changes due to the germanium and carbon atoms compensate. The local atomic structure and lattice dynamics of a strain-compensated layer are studied. Experimental and theoretical results are compatible with Vegard's rule. To handle the large bond length distortion near C atoms properly, the used valence-force field model includes anharmonic effects via bond length dependent interatomic force constants which were determined from ab initio density-functional calculations. The dependence of Raman spectra on strain and composition of Si1−x−yGexCy layers can be explained by the model calculations.
AB - We show that it is possible to adjust the strain in pseudomorphic SiGe layers on Si(001) by adding small amounts of carbon. A strain-free Si1−x−yGexCy layer can be grown on Si(001) by choosing the concentrations x and y such that the volume changes due to the germanium and carbon atoms compensate. The local atomic structure and lattice dynamics of a strain-compensated layer are studied. Experimental and theoretical results are compatible with Vegard's rule. To handle the large bond length distortion near C atoms properly, the used valence-force field model includes anharmonic effects via bond length dependent interatomic force constants which were determined from ab initio density-functional calculations. The dependence of Raman spectra on strain and composition of Si1−x−yGexCy layers can be explained by the model calculations.
UR - http://www.scopus.com/inward/record.url?scp=0029305929&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(95)80076-O
DO - 10.1016/0022-0248(95)80076-O
M3 - Article
AN - SCOPUS:0029305929
VL - 150
SP - 931
EP - 933
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
ER -