Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 695-698 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 42 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 5 Dez. 2009 |
Abstract
We study transport properties of a locally gated graphene device. The samples are made by exfoliation of natural graphite onto a SiO2 substrate such that single layers of graphene can be contacted and the potential can be tuned by applying a voltage to the SiO2. Additional top gates are fabricated to control the carrier concentration locally. In doing so we find that induced electrons and holes are distributed in two 2D systems that are decoupled. The characteristic of the Shubnikov-de Haas oscillations shows that these systems behave like two monolayers of graphene, which has to be decoupled due to its magneotransport characteristic.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 42, Nr. 4, 05.12.2009, S. 695-698.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Local gating of decoupled graphene monolayers
AU - Lüdtke, T.
AU - Schmidt, H.
AU - Barthold, P.
AU - Haug, R. J.
PY - 2009/12/5
Y1 - 2009/12/5
N2 - We study transport properties of a locally gated graphene device. The samples are made by exfoliation of natural graphite onto a SiO2 substrate such that single layers of graphene can be contacted and the potential can be tuned by applying a voltage to the SiO2. Additional top gates are fabricated to control the carrier concentration locally. In doing so we find that induced electrons and holes are distributed in two 2D systems that are decoupled. The characteristic of the Shubnikov-de Haas oscillations shows that these systems behave like two monolayers of graphene, which has to be decoupled due to its magneotransport characteristic.
AB - We study transport properties of a locally gated graphene device. The samples are made by exfoliation of natural graphite onto a SiO2 substrate such that single layers of graphene can be contacted and the potential can be tuned by applying a voltage to the SiO2. Additional top gates are fabricated to control the carrier concentration locally. In doing so we find that induced electrons and holes are distributed in two 2D systems that are decoupled. The characteristic of the Shubnikov-de Haas oscillations shows that these systems behave like two monolayers of graphene, which has to be decoupled due to its magneotransport characteristic.
KW - Decoupled
KW - Gate
KW - Graphene
KW - Transport
UR - http://www.scopus.com/inward/record.url?scp=76949103412&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2009.11.130
DO - 10.1016/j.physe.2009.11.130
M3 - Article
AN - SCOPUS:76949103412
VL - 42
SP - 695
EP - 698
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 4
ER -