Local aluminum-silicon contacts by layer selective laser ablation

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • F. Haase
  • T. Neubert
  • R. Horbelt
  • B. Terheiden
  • K. Bothe
  • R. Brendel

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Universität Konstanz
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Details

OriginalspracheEnglisch
Seiten (von - bis)2698-2700
Seitenumfang3
FachzeitschriftSolar Energy Materials and Solar Cells
Jahrgang95
Ausgabenummer9
Frühes Online-Datum3 Juni 2011
PublikationsstatusVeröffentlicht - Sept. 2011
Extern publiziertJa

Abstract

We demonstrate damage free selective laser ablation of silicon nitride from a silicon nitride/amorphous silicon double layer. This approach allows local contact formation to passivated silicon. Thereby the remaining amorphous silicon dissolves in evaporated aluminum by annealing. This technique is especially useful for contacting thin emitters since it avoids any damage to the silicon substrate. We demonstrate a local contact resistivity of 0.8±0.3 mΩ cm2 on a phosphorous diffused emitter with a peak doping density of 2×1020 cm-3. Laser treated as well as non-treated areas show the same carrier lifetime of 2000 μs on 100 Ω cm mono-crystalline silicon, proving the selective ablation.

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Local aluminum-silicon contacts by layer selective laser ablation. / Haase, F.; Neubert, T.; Horbelt, R. et al.
in: Solar Energy Materials and Solar Cells, Jahrgang 95, Nr. 9, 09.2011, S. 2698-2700.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Haase, F, Neubert, T, Horbelt, R, Terheiden, B, Bothe, K & Brendel, R 2011, 'Local aluminum-silicon contacts by layer selective laser ablation', Solar Energy Materials and Solar Cells, Jg. 95, Nr. 9, S. 2698-2700. https://doi.org/10.1016/j.solmat.2011.05.015
Haase, F., Neubert, T., Horbelt, R., Terheiden, B., Bothe, K., & Brendel, R. (2011). Local aluminum-silicon contacts by layer selective laser ablation. Solar Energy Materials and Solar Cells, 95(9), 2698-2700. https://doi.org/10.1016/j.solmat.2011.05.015
Haase F, Neubert T, Horbelt R, Terheiden B, Bothe K, Brendel R. Local aluminum-silicon contacts by layer selective laser ablation. Solar Energy Materials and Solar Cells. 2011 Sep;95(9):2698-2700. Epub 2011 Jun 3. doi: 10.1016/j.solmat.2011.05.015
Haase, F. ; Neubert, T. ; Horbelt, R. et al. / Local aluminum-silicon contacts by layer selective laser ablation. in: Solar Energy Materials and Solar Cells. 2011 ; Jahrgang 95, Nr. 9. S. 2698-2700.
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@article{f7e9383fd0474c52a6607c14aec03503,
title = "Local aluminum-silicon contacts by layer selective laser ablation",
abstract = "We demonstrate damage free selective laser ablation of silicon nitride from a silicon nitride/amorphous silicon double layer. This approach allows local contact formation to passivated silicon. Thereby the remaining amorphous silicon dissolves in evaporated aluminum by annealing. This technique is especially useful for contacting thin emitters since it avoids any damage to the silicon substrate. We demonstrate a local contact resistivity of 0.8±0.3 mΩ cm2 on a phosphorous diffused emitter with a peak doping density of 2×1020 cm-3. Laser treated as well as non-treated areas show the same carrier lifetime of 2000 μs on 100 Ω cm mono-crystalline silicon, proving the selective ablation.",
keywords = "Amorphous silicon passivation, Local contact openings, Selective laser ablation, Ultraviolet pico second laser",
author = "F. Haase and T. Neubert and R. Horbelt and B. Terheiden and K. Bothe and R. Brendel",
year = "2011",
month = sep,
doi = "10.1016/j.solmat.2011.05.015",
language = "English",
volume = "95",
pages = "2698--2700",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier BV",
number = "9",

}

Download

TY - JOUR

T1 - Local aluminum-silicon contacts by layer selective laser ablation

AU - Haase, F.

AU - Neubert, T.

AU - Horbelt, R.

AU - Terheiden, B.

AU - Bothe, K.

AU - Brendel, R.

PY - 2011/9

Y1 - 2011/9

N2 - We demonstrate damage free selective laser ablation of silicon nitride from a silicon nitride/amorphous silicon double layer. This approach allows local contact formation to passivated silicon. Thereby the remaining amorphous silicon dissolves in evaporated aluminum by annealing. This technique is especially useful for contacting thin emitters since it avoids any damage to the silicon substrate. We demonstrate a local contact resistivity of 0.8±0.3 mΩ cm2 on a phosphorous diffused emitter with a peak doping density of 2×1020 cm-3. Laser treated as well as non-treated areas show the same carrier lifetime of 2000 μs on 100 Ω cm mono-crystalline silicon, proving the selective ablation.

AB - We demonstrate damage free selective laser ablation of silicon nitride from a silicon nitride/amorphous silicon double layer. This approach allows local contact formation to passivated silicon. Thereby the remaining amorphous silicon dissolves in evaporated aluminum by annealing. This technique is especially useful for contacting thin emitters since it avoids any damage to the silicon substrate. We demonstrate a local contact resistivity of 0.8±0.3 mΩ cm2 on a phosphorous diffused emitter with a peak doping density of 2×1020 cm-3. Laser treated as well as non-treated areas show the same carrier lifetime of 2000 μs on 100 Ω cm mono-crystalline silicon, proving the selective ablation.

KW - Amorphous silicon passivation

KW - Local contact openings

KW - Selective laser ablation

KW - Ultraviolet pico second laser

UR - http://www.scopus.com/inward/record.url?scp=79959297320&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2011.05.015

DO - 10.1016/j.solmat.2011.05.015

M3 - Article

AN - SCOPUS:79959297320

VL - 95

SP - 2698

EP - 2700

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 9

ER -