Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Michael Winter
  • Dominic C. Walter
  • Byungsul Min
  • Robby Peibst
  • Rolf Brendel
  • Jan Schmidt

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Aufsatznummer8089
FachzeitschriftScientific reports
Jahrgang12
Ausgabenummer1
PublikationsstatusVeröffentlicht - 16 Mai 2022

Abstract

The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.

ASJC Scopus Sachgebiete

Zitieren

Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells. / Winter, Michael; Walter, Dominic C.; Min, Byungsul et al.
in: Scientific reports, Jahrgang 12, Nr. 1, 8089, 16.05.2022.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Winter M, Walter DC, Min B, Peibst R, Brendel R, Schmidt J. Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells. Scientific reports. 2022 Mai 16;12(1):8089. doi: 10.1038/s41598-022-11831-3
Winter, Michael ; Walter, Dominic C. ; Min, Byungsul et al. / Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells. in: Scientific reports. 2022 ; Jahrgang 12, Nr. 1.
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@article{12278f87eaa3447f8281b53f84fabb35,
title = "Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells",
abstract = "The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.",
author = "Michael Winter and Walter, {Dominic C.} and Byungsul Min and Robby Peibst and Rolf Brendel and Jan Schmidt",
note = "Funding Information: This work was supported by the German State of Lower Saxony and by the German Federal Ministry for Economic Affairs and Climate Action (BMWK) under Grant number 03EE1012A (NanoPERC). The content is the responsibility of the authors. The publication of this article was funded by the Open Access fund of Leibniz University Hannover. ",
year = "2022",
month = may,
day = "16",
doi = "10.1038/s41598-022-11831-3",
language = "English",
volume = "12",
journal = "Scientific reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

Download

TY - JOUR

T1 - Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells

AU - Winter, Michael

AU - Walter, Dominic C.

AU - Min, Byungsul

AU - Peibst, Robby

AU - Brendel, Rolf

AU - Schmidt, Jan

N1 - Funding Information: This work was supported by the German State of Lower Saxony and by the German Federal Ministry for Economic Affairs and Climate Action (BMWK) under Grant number 03EE1012A (NanoPERC). The content is the responsibility of the authors. The publication of this article was funded by the Open Access fund of Leibniz University Hannover.

PY - 2022/5/16

Y1 - 2022/5/16

N2 - The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.

AB - The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.

UR - http://www.scopus.com/inward/record.url?scp=85130172486&partnerID=8YFLogxK

U2 - 10.1038/s41598-022-11831-3

DO - 10.1038/s41598-022-11831-3

M3 - Article

C2 - 35577833

AN - SCOPUS:85130172486

VL - 12

JO - Scientific reports

JF - Scientific reports

SN - 2045-2322

IS - 1

M1 - 8089

ER -

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