Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 46-50 |
| Seitenumfang | 5 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 3 |
| Publikationsstatus | Veröffentlicht - 2011 |
| Extern publiziert | Ja |
Abstract
The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 3, 2011, S. 46-50.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Lifetime degradation mechanism in boron-doped Czochralski silicon
AU - Voronkov, V. V.
AU - Falster, R.
AU - Batunina, A. V.
AU - MacDonald, D.
AU - Bothe, K.
AU - Schmidt, J.
PY - 2011
Y1 - 2011
N2 - The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
AB - The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated acceptors Na and of donors Nd were deduced. The value of Na was found to be substantially larger than p and close to the expected total concentrations of boron. This result clearly shows that the reported correlation of the degradation with p implies a lack of correlation with Na. Such a behaviour is accounted for by a model based on formation of BiO 2 complexes (involving an interstitial boron atom Bi rather than Bs): the grown-in concentration of this species is proportional to p and independent of Na.
KW - Boron
KW - Electron lifetime
KW - Oxygen
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=79952748274&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.01.008
DO - 10.1016/j.egypro.2011.01.008
M3 - Article
AN - SCOPUS:79952748274
VL - 3
SP - 46
EP - 50
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -