Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 035119 |
| Fachzeitschrift | AIP Advances |
| Jahrgang | 6 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - März 2016 |
Abstract
We examine the carrier lifetime evolution of block-cast multicrystalline silicon (mc-Si) wafers under illumination (100 mW/cm 2) at elevated temperature (75°C). Samples are treated with different process steps typically applied in industrial solar cell production. We observe a pronounced degradation in lifetime after rapid thermal annealing (RTA) at 900°C. However, we detect only a weak lifetime instability in mc-Si wafers which are RTA-treated at 650°C. After completion of the degradation, the lifetime is observed to recover and finally reaches carrier lifetimes comparable to the initial state. To explain the observed lifetime evolution, we suggest a defect model, where metal precipitates in the mc-Si bulk dissolve during the RTA treatment.
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in: AIP Advances, Jahrgang 6, Nr. 3, 035119, 03.2016.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature
AU - Bredemeier, Dennis
AU - Walter, Dominic C.
AU - Herlufsen, Sandra
AU - Schmidt, Jan
N1 - The authors acknowledge S. Meyer from Fraunhofer CSP for the ICP-MS measurements and T. Arguirov from BTU Cottbus for the FTIR measurements. This work was funded by the German State of Lower Saxony and the German Federal Ministry of Economics and Energy and by industry partners within the research project “SolarLIFE” (contract no. 0325763C). The content is the responsibility of the authors. The publication of this article was funded by the Open Access fund of Leibniz Universität Hannover.
PY - 2016/3
Y1 - 2016/3
N2 - We examine the carrier lifetime evolution of block-cast multicrystalline silicon (mc-Si) wafers under illumination (100 mW/cm 2) at elevated temperature (75°C). Samples are treated with different process steps typically applied in industrial solar cell production. We observe a pronounced degradation in lifetime after rapid thermal annealing (RTA) at 900°C. However, we detect only a weak lifetime instability in mc-Si wafers which are RTA-treated at 650°C. After completion of the degradation, the lifetime is observed to recover and finally reaches carrier lifetimes comparable to the initial state. To explain the observed lifetime evolution, we suggest a defect model, where metal precipitates in the mc-Si bulk dissolve during the RTA treatment.
AB - We examine the carrier lifetime evolution of block-cast multicrystalline silicon (mc-Si) wafers under illumination (100 mW/cm 2) at elevated temperature (75°C). Samples are treated with different process steps typically applied in industrial solar cell production. We observe a pronounced degradation in lifetime after rapid thermal annealing (RTA) at 900°C. However, we detect only a weak lifetime instability in mc-Si wafers which are RTA-treated at 650°C. After completion of the degradation, the lifetime is observed to recover and finally reaches carrier lifetimes comparable to the initial state. To explain the observed lifetime evolution, we suggest a defect model, where metal precipitates in the mc-Si bulk dissolve during the RTA treatment.
UR - http://www.scopus.com/inward/record.url?scp=84977542512&partnerID=8YFLogxK
U2 - 10.1063/1.4944839
DO - 10.1063/1.4944839
M3 - Article
VL - 6
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 3
M1 - 035119
ER -