Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 9781479999507 |
| Publikationsstatus | Veröffentlicht - 6 Mai 2015 |
| Veranstaltung | 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 - Budapest, Ungarn Dauer: 19 Apr. 2015 → 22 Apr. 2015 |
Abstract
For mixed signal applications it is necessary to have metallization which are able to carry high currents. Also the on chip integration leads to special requirements on the metallization concerning their robustness. A common method for the determination of interconnect lifetime is described in JP001A and based on Black's law and the measurement of time to failure, medium stress current density and medium stress temperature. The highly robust metallization presented here, which was developed for higher current and temperature applications shows more complicated shapes than presently used metallization systems with metal line tracks and via. To determine a realistic life time of highly robust metallization the used method is not applicable anymore. A more suitable determination of the variables current density and temperature for AlCu metallization with W-plug can be achieved by simulations. In the metal line layout the most critical locations regarding mass flux are chosen. The results are validated by measurements.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Theoretische Informatik und Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
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2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7103123.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Life time characterization for a highly robust metallization
AU - Weide-Zaage, K.
AU - Kludt,
AU - Ackermann, M.
AU - Hein, V.
AU - Erstling, M.
N1 - Publisher Copyright: © 2015 IEEE. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/5/6
Y1 - 2015/5/6
N2 - For mixed signal applications it is necessary to have metallization which are able to carry high currents. Also the on chip integration leads to special requirements on the metallization concerning their robustness. A common method for the determination of interconnect lifetime is described in JP001A and based on Black's law and the measurement of time to failure, medium stress current density and medium stress temperature. The highly robust metallization presented here, which was developed for higher current and temperature applications shows more complicated shapes than presently used metallization systems with metal line tracks and via. To determine a realistic life time of highly robust metallization the used method is not applicable anymore. A more suitable determination of the variables current density and temperature for AlCu metallization with W-plug can be achieved by simulations. In the metal line layout the most critical locations regarding mass flux are chosen. The results are validated by measurements.
AB - For mixed signal applications it is necessary to have metallization which are able to carry high currents. Also the on chip integration leads to special requirements on the metallization concerning their robustness. A common method for the determination of interconnect lifetime is described in JP001A and based on Black's law and the measurement of time to failure, medium stress current density and medium stress temperature. The highly robust metallization presented here, which was developed for higher current and temperature applications shows more complicated shapes than presently used metallization systems with metal line tracks and via. To determine a realistic life time of highly robust metallization the used method is not applicable anymore. A more suitable determination of the variables current density and temperature for AlCu metallization with W-plug can be achieved by simulations. In the metal line layout the most critical locations regarding mass flux are chosen. The results are validated by measurements.
UR - http://www.scopus.com/inward/record.url?scp=84944790526&partnerID=8YFLogxK
U2 - 10.1109/eurosime.2015.7103123
DO - 10.1109/eurosime.2015.7103123
M3 - Conference contribution
AN - SCOPUS:84944790526
BT - 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015
Y2 - 19 April 2015 through 22 April 2015
ER -