Details
Originalsprache | Englisch |
---|---|
Aufsatznummer | 7154402 |
Seiten (von - bis) | 1335-1339 |
Seitenumfang | 5 |
Fachzeitschrift | IEEE journal of photovoltaics |
Jahrgang | 5 |
Ausgabenummer | 5 |
Publikationsstatus | Veröffentlicht - 10 Juli 2015 |
Abstract
Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 5, Nr. 5, 7154402, 10.07.2015, S. 1335-1339.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Laser Welding for Processing of Thin Crystalline Si Wafers
AU - Ernst, Marco
AU - Steckenreiter, Verena
AU - Kajari-Schroder, Sarah
AU - Brendel, Rolf
N1 - Publisher Copyright: © 2011-2012 IEEE.
PY - 2015/7/10
Y1 - 2015/7/10
N2 - Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.
AB - Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.
KW - Handling thin films
KW - laser welding
KW - macroporous silicon
KW - processing thin films
KW - Thin crystalline silicon
UR - http://www.scopus.com/inward/record.url?scp=84940047234&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2015.2449652
DO - 10.1109/JPHOTOV.2015.2449652
M3 - Article
AN - SCOPUS:84940047234
VL - 5
SP - 1335
EP - 1339
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 5
M1 - 7154402
ER -