Laser Welding for Processing of Thin Crystalline Si Wafers

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Marco Ernst
  • Verena Steckenreiter
  • Sarah Kajari-Schroder
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Australian National University
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer7154402
Seiten (von - bis)1335-1339
Seitenumfang5
FachzeitschriftIEEE journal of photovoltaics
Jahrgang5
Ausgabenummer5
PublikationsstatusVeröffentlicht - 10 Juli 2015

Abstract

Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.

ASJC Scopus Sachgebiete

Ziele für nachhaltige Entwicklung

Zitieren

Laser Welding for Processing of Thin Crystalline Si Wafers. / Ernst, Marco; Steckenreiter, Verena; Kajari-Schroder, Sarah et al.
in: IEEE journal of photovoltaics, Jahrgang 5, Nr. 5, 7154402, 10.07.2015, S. 1335-1339.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Ernst, M, Steckenreiter, V, Kajari-Schroder, S & Brendel, R 2015, 'Laser Welding for Processing of Thin Crystalline Si Wafers', IEEE journal of photovoltaics, Jg. 5, Nr. 5, 7154402, S. 1335-1339. https://doi.org/10.1109/JPHOTOV.2015.2449652
Ernst, M., Steckenreiter, V., Kajari-Schroder, S., & Brendel, R. (2015). Laser Welding for Processing of Thin Crystalline Si Wafers. IEEE journal of photovoltaics, 5(5), 1335-1339. Artikel 7154402. https://doi.org/10.1109/JPHOTOV.2015.2449652
Ernst M, Steckenreiter V, Kajari-Schroder S, Brendel R. Laser Welding for Processing of Thin Crystalline Si Wafers. IEEE journal of photovoltaics. 2015 Jul 10;5(5):1335-1339. 7154402. doi: 10.1109/JPHOTOV.2015.2449652
Ernst, Marco ; Steckenreiter, Verena ; Kajari-Schroder, Sarah et al. / Laser Welding for Processing of Thin Crystalline Si Wafers. in: IEEE journal of photovoltaics. 2015 ; Jahrgang 5, Nr. 5. S. 1335-1339.
Download
@article{70c6835a2abc4c6d9f86308c213fc5c9,
title = "Laser Welding for Processing of Thin Crystalline Si Wafers",
abstract = "Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.",
keywords = "Handling thin films, laser welding, macroporous silicon, processing thin films, Thin crystalline silicon",
author = "Marco Ernst and Verena Steckenreiter and Sarah Kajari-Schroder and Rolf Brendel",
note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",
year = "2015",
month = jul,
day = "10",
doi = "10.1109/JPHOTOV.2015.2449652",
language = "English",
volume = "5",
pages = "1335--1339",
journal = "IEEE journal of photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",
number = "5",

}

Download

TY - JOUR

T1 - Laser Welding for Processing of Thin Crystalline Si Wafers

AU - Ernst, Marco

AU - Steckenreiter, Verena

AU - Kajari-Schroder, Sarah

AU - Brendel, Rolf

N1 - Publisher Copyright: © 2011-2012 IEEE.

PY - 2015/7/10

Y1 - 2015/7/10

N2 - Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.

AB - Thin crystalline Si films (<100 μm) are used in many applications, such as sensors, photovoltaic absorbers, and optical and particle filters. Such thin crystalline Si films are difficult to handle and break easily under standard semiconductor processing. This paper presents a laser-welding process for the mechanical connection of a thin Si film with a separate stabilizing frame that is also made of crystalline Si. We measure the tear-off stresses to be in the range of 17-50 kPa. The supported thin Si films withstand typical semiconductor processes such as plasma deposition, oxidation, and wet chemical cleaning.

KW - Handling thin films

KW - laser welding

KW - macroporous silicon

KW - processing thin films

KW - Thin crystalline silicon

UR - http://www.scopus.com/inward/record.url?scp=84940047234&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2015.2449652

DO - 10.1109/JPHOTOV.2015.2449652

M3 - Article

AN - SCOPUS:84940047234

VL - 5

SP - 1335

EP - 1339

JO - IEEE journal of photovoltaics

JF - IEEE journal of photovoltaics

SN - 2156-3381

IS - 5

M1 - 7154402

ER -