Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | LAT 2010 |
| Untertitel | International Conference on Lasers, Applications, and Technologies |
| Publikationsstatus | Veröffentlicht - 7 Feb. 2011 |
| Extern publiziert | Ja |
| Veranstaltung | LAT 2010: International Conference on Lasers, Applications, and Technologies - Kazan, Russland Dauer: 23 Aug. 2010 → 26 Aug. 2010 |
Publikationsreihe
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Band | 7994 |
| ISSN (Print) | 0277-786X |
Abstract
Treatments by femtosecond Ti-sapphire laser (wavelength is 800 nm, pulse duration is <30 fs) and nanosecond KrF excimer laser (wavelength is 248 nm, pulse duration is 25 ns) were performed to study the impact of laser fluence, pulse duration and energy of photons on the process of chemical and structural reconstructions in GeOx and GeO2:Ge heterolayers. The solid GeOx films are metastable and decompose into two phases - Ge and GeO2. Nanosecond KrF laser irradiation produces significant shrinkage of GeOx films and GeO2:Ge heterolayers caped by thin SiNxOy or SiO2 films. Pulse annealing by both types of lasers stimulate as the process of nanoclusters forming and crystallization of initial amorphous Ge-nanoclusters in the GeO2 matrix. The possibility to use the solid germanium monoxide (GeO(s)) and GeO2:Ge heterolayers (without cap layers) as nano-resist in laser nanolithography was demonstrated. The new nanostructured material was formed - the layers of nanofoam GeO2 which can be obtained only with application of femtosecond laser pulse treatments.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Informatik (insg.)
- Angewandte Informatik
- Mathematik (insg.)
- Angewandte Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
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LAT 2010: International Conference on Lasers, Applications, and Technologies. 2011. 79940W (Proceedings of SPIE - The International Society for Optical Engineering; Band 7994).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Laser treatment of the heterolayers "GeO2:Ge-QDs"
AU - Gorokhov, E. B.
AU - Volodin, V. A.
AU - Kuznetsov, A. I.
AU - Chichkov, B. N.
AU - Astankova, K. N.
AU - Azarov, I. A.
PY - 2011/2/7
Y1 - 2011/2/7
N2 - Treatments by femtosecond Ti-sapphire laser (wavelength is 800 nm, pulse duration is <30 fs) and nanosecond KrF excimer laser (wavelength is 248 nm, pulse duration is 25 ns) were performed to study the impact of laser fluence, pulse duration and energy of photons on the process of chemical and structural reconstructions in GeOx and GeO2:Ge heterolayers. The solid GeOx films are metastable and decompose into two phases - Ge and GeO2. Nanosecond KrF laser irradiation produces significant shrinkage of GeOx films and GeO2:Ge heterolayers caped by thin SiNxOy or SiO2 films. Pulse annealing by both types of lasers stimulate as the process of nanoclusters forming and crystallization of initial amorphous Ge-nanoclusters in the GeO2 matrix. The possibility to use the solid germanium monoxide (GeO(s)) and GeO2:Ge heterolayers (without cap layers) as nano-resist in laser nanolithography was demonstrated. The new nanostructured material was formed - the layers of nanofoam GeO2 which can be obtained only with application of femtosecond laser pulse treatments.
AB - Treatments by femtosecond Ti-sapphire laser (wavelength is 800 nm, pulse duration is <30 fs) and nanosecond KrF excimer laser (wavelength is 248 nm, pulse duration is 25 ns) were performed to study the impact of laser fluence, pulse duration and energy of photons on the process of chemical and structural reconstructions in GeOx and GeO2:Ge heterolayers. The solid GeOx films are metastable and decompose into two phases - Ge and GeO2. Nanosecond KrF laser irradiation produces significant shrinkage of GeOx films and GeO2:Ge heterolayers caped by thin SiNxOy or SiO2 films. Pulse annealing by both types of lasers stimulate as the process of nanoclusters forming and crystallization of initial amorphous Ge-nanoclusters in the GeO2 matrix. The possibility to use the solid germanium monoxide (GeO(s)) and GeO2:Ge heterolayers (without cap layers) as nano-resist in laser nanolithography was demonstrated. The new nanostructured material was formed - the layers of nanofoam GeO2 which can be obtained only with application of femtosecond laser pulse treatments.
KW - Femto-and nanosecond laser modification
KW - Ge-nanoclusters in GeO
KW - Nano-foam
UR - http://www.scopus.com/inward/record.url?scp=79952634360&partnerID=8YFLogxK
U2 - 10.1117/12.882043
DO - 10.1117/12.882043
M3 - Conference contribution
AN - SCOPUS:79952634360
SN - 9780819485670
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - LAT 2010
T2 - LAT 2010: International Conference on Lasers, Applications, and Technologies
Y2 - 23 August 2010 through 26 August 2010
ER -