Laser transfer doping for contacting n-type crystalline Si solar cells

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Rafel Ferré
  • Ralf Gogolin
  • Jens Müller
  • Nils Peter Harder
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1964-1966
Seitenumfang3
FachzeitschriftPhysica Status Solidi (A) Applications and Materials Science
Jahrgang208
Ausgabenummer8
Frühes Online-Datum29 März 2011
PublikationsstatusVeröffentlicht - 10 Aug. 2011

Abstract

We demonstrate laser transfer doping (LTD) for producing locally doped regions in surface passivated Silicon wafers. A pulsed laser transfers phosphorus-doped amorphous silicon from a carrier glass to a surface passivated silicon wafer. We employ this process for producing local high-low junctions for the formation of n +-n back surface field layers that are contacted with Al. The contact's surface recombination velocities and the contact resistances depend on the laser processing and annealing conditions. They range from S cont = 20 to 1500 cm s -1 and from R cont = 1 to 1000 mω cm 2, respectively. The combination of acceptable contact resistance and low recombination velocities makes the LTD technique suitable for the formation of the rear contacts of n-type high-efficiency solar cells. The simplicity of the process makes it a candidate for industrial production.

ASJC Scopus Sachgebiete

Zitieren

Laser transfer doping for contacting n-type crystalline Si solar cells. / Ferré, Rafel; Gogolin, Ralf; Müller, Jens et al.
in: Physica Status Solidi (A) Applications and Materials Science, Jahrgang 208, Nr. 8, 10.08.2011, S. 1964-1966.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Ferré R, Gogolin R, Müller J, Harder NP, Brendel R. Laser transfer doping for contacting n-type crystalline Si solar cells. Physica Status Solidi (A) Applications and Materials Science. 2011 Aug 10;208(8):1964-1966. Epub 2011 Mär 29. doi: 10.1002/pssa.201127046
Ferré, Rafel ; Gogolin, Ralf ; Müller, Jens et al. / Laser transfer doping for contacting n-type crystalline Si solar cells. in: Physica Status Solidi (A) Applications and Materials Science. 2011 ; Jahrgang 208, Nr. 8. S. 1964-1966.
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AU - Gogolin, Ralf

AU - Müller, Jens

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