Laser threshold reduction in a spintronic device

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

Organisationseinheiten

Externe Organisationen

  • University of Arizona
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)4516-4518
Seitenumfang3
FachzeitschriftApplied Physics Letters
Jahrgang82
Ausgabenummer25
PublikationsstatusVeröffentlicht - 16 Juni 2003

Abstract

The laser threshold reduction in a spintronic device was discussed. A reduction of the threshold of a semiconductor laser by optically pumping spin-polarized electrons in the gain medium was elaborated. The analysis showed that the polarized electrons coupled selectively to one of two possible lasing light modes which effectively reduced the threshold up to 50% compared to conventional pumping with unpolarized electrons.

ASJC Scopus Sachgebiete

Zitieren

Laser threshold reduction in a spintronic device. / Rudolph, Jörg; Hägele, Daniel; Gibbs, H. M. et al.
in: Applied Physics Letters, Jahrgang 82, Nr. 25, 16.06.2003, S. 4516-4518.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Rudolph, J, Hägele, D, Gibbs, HM, Khitrova, G & Oestreich, M 2003, 'Laser threshold reduction in a spintronic device', Applied Physics Letters, Jg. 82, Nr. 25, S. 4516-4518. https://doi.org/10.1063/1.1583145
Rudolph, J., Hägele, D., Gibbs, H. M., Khitrova, G., & Oestreich, M. (2003). Laser threshold reduction in a spintronic device. Applied Physics Letters, 82(25), 4516-4518. https://doi.org/10.1063/1.1583145
Rudolph J, Hägele D, Gibbs HM, Khitrova G, Oestreich M. Laser threshold reduction in a spintronic device. Applied Physics Letters. 2003 Jun 16;82(25):4516-4518. doi: 10.1063/1.1583145
Rudolph, Jörg ; Hägele, Daniel ; Gibbs, H. M. et al. / Laser threshold reduction in a spintronic device. in: Applied Physics Letters. 2003 ; Jahrgang 82, Nr. 25. S. 4516-4518.
Download
@article{e9007a54a1634ae3af11878e20e45c90,
title = "Laser threshold reduction in a spintronic device",
abstract = "The laser threshold reduction in a spintronic device was discussed. A reduction of the threshold of a semiconductor laser by optically pumping spin-polarized electrons in the gain medium was elaborated. The analysis showed that the polarized electrons coupled selectively to one of two possible lasing light modes which effectively reduced the threshold up to 50% compared to conventional pumping with unpolarized electrons.",
author = "J{\"o}rg Rudolph and Daniel H{\"a}gele and Gibbs, {H. M.} and G. Khitrova and Michael Oestreich",
year = "2003",
month = jun,
day = "16",
doi = "10.1063/1.1583145",
language = "English",
volume = "82",
pages = "4516--4518",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "25",

}

Download

TY - JOUR

T1 - Laser threshold reduction in a spintronic device

AU - Rudolph, Jörg

AU - Hägele, Daniel

AU - Gibbs, H. M.

AU - Khitrova, G.

AU - Oestreich, Michael

PY - 2003/6/16

Y1 - 2003/6/16

N2 - The laser threshold reduction in a spintronic device was discussed. A reduction of the threshold of a semiconductor laser by optically pumping spin-polarized electrons in the gain medium was elaborated. The analysis showed that the polarized electrons coupled selectively to one of two possible lasing light modes which effectively reduced the threshold up to 50% compared to conventional pumping with unpolarized electrons.

AB - The laser threshold reduction in a spintronic device was discussed. A reduction of the threshold of a semiconductor laser by optically pumping spin-polarized electrons in the gain medium was elaborated. The analysis showed that the polarized electrons coupled selectively to one of two possible lasing light modes which effectively reduced the threshold up to 50% compared to conventional pumping with unpolarized electrons.

UR - http://www.scopus.com/inward/record.url?scp=0038044789&partnerID=8YFLogxK

U2 - 10.1063/1.1583145

DO - 10.1063/1.1583145

M3 - Article

AN - SCOPUS:0038044789

VL - 82

SP - 4516

EP - 4518

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -

Von denselben Autoren