Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 237-243 |
Seitenumfang | 7 |
Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
Jahrgang | 15 |
Ausgabenummer | 3 |
Frühes Online-Datum | 5 Okt. 2006 |
Publikationsstatus | Veröffentlicht - Mai 2007 |
Extern publiziert | Ja |
Abstract
We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
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in: Progress in Photovoltaics: Research and Applications, Jahrgang 15, Nr. 3, 05.2007, S. 237-243.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Laser structuring for back junction silicon solar cells
AU - Engelhart, Peter
AU - Harder, Nils Peter
AU - Grischke, Rainer
AU - Merkle, Agnes
AU - Meyer, Rüdiger
AU - Brendel, Rolf
N1 - Funding Information: The financial support by the State of Lower Saxony and the German FederalGovernment is gratefully acknowledged. The ISFH is a member of the Forschungsverbund Sonnenenergie.
PY - 2007/5
Y1 - 2007/5
N2 - We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.
AB - We demonstrate mask-free fabrication of a 22.0%-efficient crystalline Si solar cell by applying laser ablation of Si and by laser ablation of protective coatings. The bulk absorber material is a p-type float zone silicon wafer and the designated cell area is 4 cm2. While the processing time of our laboratory-type of laser system is far too slow for industrial processing, we estimate on the basis of our experiments that laser processing of 12.5 × 12.5 cm2-sized solar cells in just a few seconds is feasible with commercially available equipment.
KW - Back contact
KW - Back junction
KW - High efficiency
KW - Laser technology
KW - Rear interdigitated
KW - RISE
KW - Silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=34247142898&partnerID=8YFLogxK
U2 - 10.1002/pip.732
DO - 10.1002/pip.732
M3 - Article
AN - SCOPUS:34247142898
VL - 15
SP - 237
EP - 243
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 3
ER -