TY - JOUR

T1 - Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

AU - Haase, Felix

AU - Hollemann, Christina

AU - Schäfer, Sören

AU - Merkle, Agnes

AU - Rienäcker, Michael

AU - Krügener, Jan

AU - Brendel, Rolf

AU - Peibst, Robby

N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) and the State of Lower Saxony for funding this work, Hilke Fischer, Annika Raugewitz, Sabine Schmidt (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing, Jan Hensen (ISFH) for the SEM analysis and Tobias Neubert and David Sylla (both ISFH) for fruitful discussions about the laser process.

PY - 2018/11

Y1 - 2018/11

N2 - We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2 fA cm−2 (6 fA cm−2) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm2 on the solar cell with a contact area of only 3%.

AB - We demonstrate damage-free laser contact openings in silicon oxide layers on polycrystalline silicon on oxide (POLO) passivating contacts. A pulsed UV-laser evaporates the upper part of the polycrystalline silicon layer, lifting off the silicon oxide layer on top. On n-type POLO (and p-type POLO, respectively) samples a saturation current density of 2 fA cm−2 (6 fA cm−2) and an implied open-circuit voltage of 733 mV (727 mV) are achieved with a laser contact opening area fraction of 12.3% (8.7%). The application of this ablation process in an interdigitated back contact solar cell leads to an independently confirmed power conversion efficiency of 26.1%. The excellent contact quality of the laser contact openings is proven by the low series resistance of 0.1 Ω cm2 on the solar cell with a contact area of only 3%.

KW - Back-contact solar cell

KW - Laser

KW - Passivating contacts

KW - POLO

UR - http://www.scopus.com/inward/record.url?scp=85048171181&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2018.06.020

DO - 10.1016/j.solmat.2018.06.020

M3 - Article

AN - SCOPUS:85048171181

VL - 186

SP - 184

EP - 193

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -