Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Peter Engelhart
  • Sonja Hermann
  • Tobias Neubert
  • Heiko Plagwitz
  • Rainer Grischke
  • Rüdiger Meyer
  • Ulrich Klug
  • Aart Schoonderbeek
  • Uwe Stute
  • Rolf Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Laser Zentrum Hannover e.V. (LZH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)521-527
Seitenumfang7
FachzeitschriftProgress in Photovoltaics: Research and Applications
Jahrgang15
Ausgabenummer6
Frühes Online-Datum27 März 2007
PublikationsstatusVeröffentlicht - Sept. 2007

Abstract

We apply ultra-short pulse laser ablation to create local contact openings in thermally grown passivating SiO2 layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τpulse ∼ 10ps. The specific contact resistance that we reach with evaporated aluminium on a 100Ω/sq and P-dijfused emitter is in the range of 0-3-1 mΩ cm2. Ultra-short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J0e= (6·2 ±1·6) × 10-13 A/cm2 on the laser-treated areas after a selective emitter diffusion with Rsheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO 2 layer removed by HF-etching. Thus, laser ablation of dielectrics with pulse durations of about 10ps is well suited to fabricate high-efficiency Si solar cells.

ASJC Scopus Sachgebiete

Ziele für nachhaltige Entwicklung

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Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses. / Engelhart, Peter; Hermann, Sonja; Neubert, Tobias et al.
in: Progress in Photovoltaics: Research and Applications, Jahrgang 15, Nr. 6, 09.2007, S. 521-527.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Engelhart, P, Hermann, S, Neubert, T, Plagwitz, H, Grischke, R, Meyer, R, Klug, U, Schoonderbeek, A, Stute, U & Brendel, R 2007, 'Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses', Progress in Photovoltaics: Research and Applications, Jg. 15, Nr. 6, S. 521-527. https://doi.org/10.1002/pip.758
Engelhart, P., Hermann, S., Neubert, T., Plagwitz, H., Grischke, R., Meyer, R., Klug, U., Schoonderbeek, A., Stute, U., & Brendel, R. (2007). Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses. Progress in Photovoltaics: Research and Applications, 15(6), 521-527. https://doi.org/10.1002/pip.758
Engelhart P, Hermann S, Neubert T, Plagwitz H, Grischke R, Meyer R et al. Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses. Progress in Photovoltaics: Research and Applications. 2007 Sep;15(6):521-527. Epub 2007 Mär 27. doi: 10.1002/pip.758
Engelhart, Peter ; Hermann, Sonja ; Neubert, Tobias et al. / Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses. in: Progress in Photovoltaics: Research and Applications. 2007 ; Jahrgang 15, Nr. 6. S. 521-527.
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T1 - Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses

AU - Engelhart, Peter

AU - Hermann, Sonja

AU - Neubert, Tobias

AU - Plagwitz, Heiko

AU - Grischke, Rainer

AU - Meyer, Rüdiger

AU - Klug, Ulrich

AU - Schoonderbeek, Aart

AU - Stute, Uwe

AU - Brendel, Rolf

N1 - Funding Information: The financial support by the State of Lower Saxony is gratefully acknowledged. We gratefully acknowledgefruitful discussions with Bernhard Fischer. The ISFH is a member of theForschungsverbund Sonnenenergie e.V

PY - 2007/9

Y1 - 2007/9

N2 - We apply ultra-short pulse laser ablation to create local contact openings in thermally grown passivating SiO2 layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τpulse ∼ 10ps. The specific contact resistance that we reach with evaporated aluminium on a 100Ω/sq and P-dijfused emitter is in the range of 0-3-1 mΩ cm2. Ultra-short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J0e= (6·2 ±1·6) × 10-13 A/cm2 on the laser-treated areas after a selective emitter diffusion with Rsheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO 2 layer removed by HF-etching. Thus, laser ablation of dielectrics with pulse durations of about 10ps is well suited to fabricate high-efficiency Si solar cells.

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