Landau versus one-dimensional quantization in GaAs

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Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Paul-Drude-Institut für Festkörperelektronik (PDI)
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Details

OriginalspracheEnglisch
Seiten (von - bis)390-392
Seitenumfang3
FachzeitschriftJournal of Luminescence
Jahrgang60-61
AusgabenummerC
PublikationsstatusVeröffentlicht - Apr. 1994
Extern publiziertJa

Abstract

We investigate quantum wires with time-resolved magnetoluminescence spectroscopy under high excitation intensity at fields up to 14 T. A transition from one-dimensional quantization to Landau quantization takes place at 6 T for a GaAs wire with an active cross section of 60 nm x 10.6 nm. Bandgap renormalization appears to be enhanced by 30% in comparison to quantum wells.

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Landau versus one-dimensional quantization in GaAs. / Oestreich, Michael; Heberle, A. P.; Rühle, W. W. et al.
in: Journal of Luminescence, Jahrgang 60-61, Nr. C, 04.1994, S. 390-392.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Oestreich, M, Heberle, AP, Rühle, WW, Lage, H, Heitmann, D & Ploog, K 1994, 'Landau versus one-dimensional quantization in GaAs', Journal of Luminescence, Jg. 60-61, Nr. C, S. 390-392. https://doi.org/10.1016/0022-2313(94)90173-2
Oestreich, M., Heberle, A. P., Rühle, W. W., Lage, H., Heitmann, D., & Ploog, K. (1994). Landau versus one-dimensional quantization in GaAs. Journal of Luminescence, 60-61(C), 390-392. https://doi.org/10.1016/0022-2313(94)90173-2
Oestreich M, Heberle AP, Rühle WW, Lage H, Heitmann D, Ploog K. Landau versus one-dimensional quantization in GaAs. Journal of Luminescence. 1994 Apr;60-61(C):390-392. doi: 10.1016/0022-2313(94)90173-2
Oestreich, Michael ; Heberle, A. P. ; Rühle, W. W. et al. / Landau versus one-dimensional quantization in GaAs. in: Journal of Luminescence. 1994 ; Jahrgang 60-61, Nr. C. S. 390-392.
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AU - Lage, H.

AU - Heitmann, D.

AU - Ploog, K.

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