Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 035305 |
| Fachzeitschrift | AIP Advances |
| Jahrgang | 7 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - März 2017 |
Abstract
Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant R de of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of R de on I is measured, at high illumination intensities, R de seems to saturate. We are able to explain the saturation by assuming that R de increases proportionally with the excess carrier concentration Δn and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δn and hence the slope of Δn(I) decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: AIP Advances, Jahrgang 7, Nr. 3, 035305, 03.2017.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
AU - Steckenreiter, Verena
AU - Walter, Dominic C.
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2017 Author(s).
PY - 2017/3
Y1 - 2017/3
N2 - Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant R de of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of R de on I is measured, at high illumination intensities, R de seems to saturate. We are able to explain the saturation by assuming that R de increases proportionally with the excess carrier concentration Δn and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δn and hence the slope of Δn(I) decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.
AB - Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant R de of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of R de on I is measured, at high illumination intensities, R de seems to saturate. We are able to explain the saturation by assuming that R de increases proportionally with the excess carrier concentration Δn and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δn and hence the slope of Δn(I) decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.
UR - http://www.scopus.com/inward/record.url?scp=85014693403&partnerID=8YFLogxK
U2 - 10.1063/1.4978266
DO - 10.1063/1.4978266
M3 - Article
VL - 7
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 3
M1 - 035305
ER -