Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 035210 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 76 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 30 Juli 2007 |
| Extern publiziert | Ja |
Abstract
We present experimental data relating to the slow stage of the illumination-induced or electron-injection-induced generation, in crystalline p -type silicon, of the carrier-recombination center believed to be the defect complex (Bs O2i) + formed by diffusion of oxygen interstitial dimers O 2i ++ to substitutional boron atoms Bs- and, taking account of those data, we consider a detailed theoretical model for the kinetics of the diffusion reaction. The model proposes that the generation rate of the (Bs O2i) + defects is controlled by the capture of a majority-carrier hole by the dimer following the capture of a minority-carrier electron and by the Coulomb attraction of the O 2i ++ to the Bs- atom, and leads to predictions for the defect generation rate that are in excellent quantitative agreement with experiment.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 76, Nr. 3, 035210, 30.07.2007.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon
AU - Palmer, Derek W.
AU - Bothe, Karsten
AU - Schmidt, Jan
PY - 2007/7/30
Y1 - 2007/7/30
N2 - We present experimental data relating to the slow stage of the illumination-induced or electron-injection-induced generation, in crystalline p -type silicon, of the carrier-recombination center believed to be the defect complex (Bs O2i) + formed by diffusion of oxygen interstitial dimers O 2i ++ to substitutional boron atoms Bs- and, taking account of those data, we consider a detailed theoretical model for the kinetics of the diffusion reaction. The model proposes that the generation rate of the (Bs O2i) + defects is controlled by the capture of a majority-carrier hole by the dimer following the capture of a minority-carrier electron and by the Coulomb attraction of the O 2i ++ to the Bs- atom, and leads to predictions for the defect generation rate that are in excellent quantitative agreement with experiment.
AB - We present experimental data relating to the slow stage of the illumination-induced or electron-injection-induced generation, in crystalline p -type silicon, of the carrier-recombination center believed to be the defect complex (Bs O2i) + formed by diffusion of oxygen interstitial dimers O 2i ++ to substitutional boron atoms Bs- and, taking account of those data, we consider a detailed theoretical model for the kinetics of the diffusion reaction. The model proposes that the generation rate of the (Bs O2i) + defects is controlled by the capture of a majority-carrier hole by the dimer following the capture of a minority-carrier electron and by the Coulomb attraction of the O 2i ++ to the Bs- atom, and leads to predictions for the defect generation rate that are in excellent quantitative agreement with experiment.
UR - http://www.scopus.com/inward/record.url?scp=34547495336&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.76.035210
DO - 10.1103/PhysRevB.76.035210
M3 - Article
AN - SCOPUS:34547495336
VL - 76
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 3
M1 - 035210
ER -