Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 477-482 |
| Seitenumfang | 6 |
| Fachzeitschrift | Journal of Crystal Growth |
| Jahrgang | 249 |
| Ausgabenummer | 3-4 |
| Publikationsstatus | Veröffentlicht - 20 Jan. 2003 |
Abstract
Using reflection high-energy electron diffraction, photoluminescence and atomic force microscopy, we have compared the growth of self-assembled InAs quantum dots (QDs) on AlAs(1 0 0) surfaces with that on GaAs(1 0 0). Due to the nearly identical lattice mismatch, we have observed the same critical thickness for the strained InAs wetting layer on both GaAs and AlAs. The main difference between the two systems is that the growth of InAs/AlAs QDs proceeds about two times slower (depending on the growth conditions). This is attributed to reduced In migration on the AlAs surface which also explains the smaller size and larger density of the QDs. Our results show that when the diffusion is enhanced, e.g. by increasing the substrate temperature, the QD density can be reduced which is of importance for single-QD device applications.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of Crystal Growth, Jahrgang 249, Nr. 3-4, 20.01.2003, S. 477-482.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Kinetically limited quantum dot formation on AlAs(1 0 0) surfaces
AU - Pierz, K.
AU - Ma, Z.
AU - Keyser, U. F.
AU - Haug, R. J.
N1 - Funding information: We thank H. Marx for MBE growth and the Deutsche Forschungsgemeinschaft (DFG grant nos. Pi 385/1-2 and Ha 1826/5-2) for financial support.
PY - 2003/1/20
Y1 - 2003/1/20
N2 - Using reflection high-energy electron diffraction, photoluminescence and atomic force microscopy, we have compared the growth of self-assembled InAs quantum dots (QDs) on AlAs(1 0 0) surfaces with that on GaAs(1 0 0). Due to the nearly identical lattice mismatch, we have observed the same critical thickness for the strained InAs wetting layer on both GaAs and AlAs. The main difference between the two systems is that the growth of InAs/AlAs QDs proceeds about two times slower (depending on the growth conditions). This is attributed to reduced In migration on the AlAs surface which also explains the smaller size and larger density of the QDs. Our results show that when the diffusion is enhanced, e.g. by increasing the substrate temperature, the QD density can be reduced which is of importance for single-QD device applications.
AB - Using reflection high-energy electron diffraction, photoluminescence and atomic force microscopy, we have compared the growth of self-assembled InAs quantum dots (QDs) on AlAs(1 0 0) surfaces with that on GaAs(1 0 0). Due to the nearly identical lattice mismatch, we have observed the same critical thickness for the strained InAs wetting layer on both GaAs and AlAs. The main difference between the two systems is that the growth of InAs/AlAs QDs proceeds about two times slower (depending on the growth conditions). This is attributed to reduced In migration on the AlAs surface which also explains the smaller size and larger density of the QDs. Our results show that when the diffusion is enhanced, e.g. by increasing the substrate temperature, the QD density can be reduced which is of importance for single-QD device applications.
KW - A1. Low dimensional structures
KW - A2. Stranski-Krastanov growth
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=0037364816&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(02)02333-3
DO - 10.1016/S0022-0248(02)02333-3
M3 - Article
AN - SCOPUS:0037364816
VL - 249
SP - 477
EP - 482
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -