Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 12-17 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 142 |
| Publikationsstatus | Veröffentlicht - 29 Nov. 2015 |
Abstract
We investigate the electrical and structural characteristics after ion implantation of BFx (x=1,2) for silicon solar cells. Compared to non-amorphizing species, e.g. B, amorphizing species, like BFx, offer the possibility to lower the thermal budget, which is needed for the curing of implant-induced crystal defects. For implant energies above 30 keV (BF2) we find a strong degradation of the charge carrier lifetime in the volume as well as an increase of the emitter saturation current density J0 compared to implantation of elemental boron. This behavior can be related to a defective solid phase epitaxy during the recrystallization in the annealing process after implantation. Implantation of BF2 at 10 keV and subsequent annealing at 1050 °C for 30 min results in J0 values of 41±3 fA/cm for a planar, Al2O3 passivated 133 Ω/sq emitter. Furthermore, using implantation of BF2 at 20 keV allows lowering the annealing temperature from 1050 °C, as commonly used for elemental boron, to 950 °C. The latter results in a J0 of 58±2 fA/cm for a planar, Al2O3 passivated 141 Ω/sq emitter.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Solar Energy Materials and Solar Cells, Jahrgang 142, 29.11.2015, S. 12-17.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Ion implantation of boric molecules for silicon solar cells
AU - Krügener, Jan
AU - Peibst, Robby
AU - Bugiel, Eberhard
AU - Tetzlaff, Dominic
AU - Kiefer, Fabian
AU - Jestremski, Marcel
AU - Brendel, Rolf
AU - Osten, H. Jörg
N1 - Funding information: The authors thank Andreas Klatt, Andrea Lissel, Sabine Kirstein and Peter Giesel for their help with the sample processing. This work was supported by the German Federal Ministry for Economic Affairs and Energy ( BMWi ) under contract no. 0325480C . Furthermore the authors would like to thank the Laboratory of Nano and Quantum Engineering (LNQE) for TEM.
PY - 2015/11/29
Y1 - 2015/11/29
N2 - We investigate the electrical and structural characteristics after ion implantation of BFx (x=1,2) for silicon solar cells. Compared to non-amorphizing species, e.g. B, amorphizing species, like BFx, offer the possibility to lower the thermal budget, which is needed for the curing of implant-induced crystal defects. For implant energies above 30 keV (BF2) we find a strong degradation of the charge carrier lifetime in the volume as well as an increase of the emitter saturation current density J0 compared to implantation of elemental boron. This behavior can be related to a defective solid phase epitaxy during the recrystallization in the annealing process after implantation. Implantation of BF2 at 10 keV and subsequent annealing at 1050 °C for 30 min results in J0 values of 41±3 fA/cm for a planar, Al2O3 passivated 133 Ω/sq emitter. Furthermore, using implantation of BF2 at 20 keV allows lowering the annealing temperature from 1050 °C, as commonly used for elemental boron, to 950 °C. The latter results in a J0 of 58±2 fA/cm for a planar, Al2O3 passivated 141 Ω/sq emitter.
AB - We investigate the electrical and structural characteristics after ion implantation of BFx (x=1,2) for silicon solar cells. Compared to non-amorphizing species, e.g. B, amorphizing species, like BFx, offer the possibility to lower the thermal budget, which is needed for the curing of implant-induced crystal defects. For implant energies above 30 keV (BF2) we find a strong degradation of the charge carrier lifetime in the volume as well as an increase of the emitter saturation current density J0 compared to implantation of elemental boron. This behavior can be related to a defective solid phase epitaxy during the recrystallization in the annealing process after implantation. Implantation of BF2 at 10 keV and subsequent annealing at 1050 °C for 30 min results in J0 values of 41±3 fA/cm for a planar, Al2O3 passivated 133 Ω/sq emitter. Furthermore, using implantation of BF2 at 20 keV allows lowering the annealing temperature from 1050 °C, as commonly used for elemental boron, to 950 °C. The latter results in a J0 of 58±2 fA/cm for a planar, Al2O3 passivated 141 Ω/sq emitter.
KW - Annealing
KW - BF
KW - Ion implantation
KW - Silicon
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84940585042&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2015.05.024
DO - 10.1016/j.solmat.2015.05.024
M3 - Article
AN - SCOPUS:84940585042
VL - 142
SP - 12
EP - 17
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -