Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings |
| Herausgeber/-innen | Volker Haublein, Heiner Ryssel |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 90-93 |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9781538668283 |
| Publikationsstatus | Veröffentlicht - Sept. 2018 |
| Veranstaltung | 22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Deutschland Dauer: 16 Sept. 2018 → 21 Sept. 2018 |
Publikationsreihe
| Name | Proceedings of the International Conference on Ion Implantation Technology |
|---|---|
| Band | 2018-September |
Abstract
We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Ziele für nachhaltige Entwicklung
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- BibTex
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2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. Hrsg. / Volker Haublein; Heiner Ryssel. Institute of Electrical and Electronics Engineers Inc., 2018. S. 90-93 8807962 (Proceedings of the International Conference on Ion Implantation Technology; Band 2018-September).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Ion Implantation of As, P, B, BF and BF2 on Planar and Alkaline-Textured Si(001) Surfaces for Photovoltaic Applications
AU - Krügener, Jan
AU - Kiefer, Fabian
AU - Peibst, Robby
AU - Osten, H. Jörg
N1 - Funding information: ACKNOWLEDGMENT This work was funded by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325480C and no. 0325827C.
PY - 2018/9
Y1 - 2018/9
N2 - We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
AB - We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.
KW - ion implantation
KW - silicon
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=85071919733&partnerID=8YFLogxK
U2 - 10.1109/iit.2018.8807962
DO - 10.1109/iit.2018.8807962
M3 - Conference contribution
AN - SCOPUS:85071919733
T3 - Proceedings of the International Conference on Ion Implantation Technology
SP - 90
EP - 93
BT - 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
A2 - Haublein, Volker
A2 - Ryssel, Heiner
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Conference on Ion Implantation Technology, IIT 2018
Y2 - 16 September 2018 through 21 September 2018
ER -