Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III |
| Untertitel | 1 - 2 October 1997, Austin, Texas |
| Erscheinungsort | Bellingham |
| Herausgeber (Verlag) | SPIE |
| Seiten | 160-166 |
| Seitenumfang | 7 |
| ISBN (Print) | 0-8194-2648-2 |
| Publikationsstatus | Veröffentlicht - 11 Sept. 1997 |
| Veranstaltung | Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III - Austin, TX, USA / Vereinigte Staaten Dauer: 1 Okt. 1997 → 1 Okt. 1997 |
Publikationsreihe
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Herausgeber (Verlag) | SPIE |
| Band | 3216 |
| ISSN (Print) | 0277-786X |
Abstract
For reliability prediction in metallization structures the different migration mechanisms like electro-thermo- and stressmigration (due to mismatch of thermal expansion and elastic moduli) become more and more important. With numerical methods like the finite element methode FEM, it is possible to determine the weakest part of a metallization structure. In this paper the mechanical stress distribution as well as the mass flux and mass flux divergence due to electrical, mechanical and thermal effects will be investigated and correlated with measurements. In the investigations an unpassivated aluminum-meander test structure was used. For the aluminum meander structure the current density, temperature gradients and mechanical stress distributions were determined by finite element simulations with the FEM-program ANSYS. The resistivity as well as the activation energy was determined by measurements. Based on the results of the simulations the mass flux due to mechanical stress were calculated and compared with the calculated electro- and therrnomigration mass flux.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Informatik (insg.)
- Angewandte Informatik
- Mathematik (insg.)
- Angewandte Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III: 1 - 2 October 1997, Austin, Texas. Bellingham: SPIE, 1997. S. 160-166 (Proceedings of SPIE - The International Society for Optical Engineering; Band 3216).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Investigations of mechanical stress and electromigration in an aluminum meander structure
AU - Yu, Xiaoying
AU - Weide, Kirsten
N1 - Copyright: Copyright 2009 Elsevier B.V., All rights reserved.
PY - 1997/9/11
Y1 - 1997/9/11
N2 - For reliability prediction in metallization structures the different migration mechanisms like electro-thermo- and stressmigration (due to mismatch of thermal expansion and elastic moduli) become more and more important. With numerical methods like the finite element methode FEM, it is possible to determine the weakest part of a metallization structure. In this paper the mechanical stress distribution as well as the mass flux and mass flux divergence due to electrical, mechanical and thermal effects will be investigated and correlated with measurements. In the investigations an unpassivated aluminum-meander test structure was used. For the aluminum meander structure the current density, temperature gradients and mechanical stress distributions were determined by finite element simulations with the FEM-program ANSYS. The resistivity as well as the activation energy was determined by measurements. Based on the results of the simulations the mass flux due to mechanical stress were calculated and compared with the calculated electro- and therrnomigration mass flux.
AB - For reliability prediction in metallization structures the different migration mechanisms like electro-thermo- and stressmigration (due to mismatch of thermal expansion and elastic moduli) become more and more important. With numerical methods like the finite element methode FEM, it is possible to determine the weakest part of a metallization structure. In this paper the mechanical stress distribution as well as the mass flux and mass flux divergence due to electrical, mechanical and thermal effects will be investigated and correlated with measurements. In the investigations an unpassivated aluminum-meander test structure was used. For the aluminum meander structure the current density, temperature gradients and mechanical stress distributions were determined by finite element simulations with the FEM-program ANSYS. The resistivity as well as the activation energy was determined by measurements. Based on the results of the simulations the mass flux due to mechanical stress were calculated and compared with the calculated electro- and therrnomigration mass flux.
KW - Electromigration
KW - Finite element
KW - Mechanical stress
KW - Metallization
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=34250775358&partnerID=8YFLogxK
U2 - 10.1117/12.284698
DO - 10.1117/12.284698
M3 - Conference contribution
AN - SCOPUS:34250775358
SN - 0-8194-2648-2
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 160
EP - 166
BT - Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III
PB - SPIE
CY - Bellingham
T2 - Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III
Y2 - 1 October 1997 through 1 October 1997
ER -