Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1934-1937 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 77 |
| Ausgabenummer | 5 |
| Frühes Online-Datum | 1 März 1995 |
| Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 1 März 1995 |
| Extern publiziert | Ja |
Abstract
We report on x-ray diffraction measurements of the substitutional carbon content y in pseudomorphic Si1-yCy (y<0.02) layers grown on (100)-oriented silicon substrate. The samples were grown by molecular beam epitaxy and investigated during post growth annealing in situ by an x-ray powder diffractometer. Despite the tensile strain in the 100-nm-thick layers and the high carbon supersaturation, the samples were stable up to 800°C. Beyond this temperature range, the substitutional carbon content decreased exponentially during isothermal annealing. This effect can be explained by the precipitation of the carbon and the nucleation and diffusion limited growth of SiC nanocrystals. Since no strain relief by the introduction of misfit dislocations was detectible, we conclude that contrary to the mechanism of strain relief in Si1-xGex, in comparably strained Si 1-yCy epilayers, the main high temperature process is precipitation.
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in: Journal of applied physics, Jahrgang 77, Nr. 5, 01.03.1995, S. 1934-1937.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Investigation of the high temperature behavior of strained Si 1-yCy/Si heterostructures
AU - Fischer, G. G.
AU - Zaumseil, P.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 1995/3/1
Y1 - 1995/3/1
N2 - We report on x-ray diffraction measurements of the substitutional carbon content y in pseudomorphic Si1-yCy (y<0.02) layers grown on (100)-oriented silicon substrate. The samples were grown by molecular beam epitaxy and investigated during post growth annealing in situ by an x-ray powder diffractometer. Despite the tensile strain in the 100-nm-thick layers and the high carbon supersaturation, the samples were stable up to 800°C. Beyond this temperature range, the substitutional carbon content decreased exponentially during isothermal annealing. This effect can be explained by the precipitation of the carbon and the nucleation and diffusion limited growth of SiC nanocrystals. Since no strain relief by the introduction of misfit dislocations was detectible, we conclude that contrary to the mechanism of strain relief in Si1-xGex, in comparably strained Si 1-yCy epilayers, the main high temperature process is precipitation.
AB - We report on x-ray diffraction measurements of the substitutional carbon content y in pseudomorphic Si1-yCy (y<0.02) layers grown on (100)-oriented silicon substrate. The samples were grown by molecular beam epitaxy and investigated during post growth annealing in situ by an x-ray powder diffractometer. Despite the tensile strain in the 100-nm-thick layers and the high carbon supersaturation, the samples were stable up to 800°C. Beyond this temperature range, the substitutional carbon content decreased exponentially during isothermal annealing. This effect can be explained by the precipitation of the carbon and the nucleation and diffusion limited growth of SiC nanocrystals. Since no strain relief by the introduction of misfit dislocations was detectible, we conclude that contrary to the mechanism of strain relief in Si1-xGex, in comparably strained Si 1-yCy epilayers, the main high temperature process is precipitation.
UR - http://www.scopus.com/inward/record.url?scp=0000406804&partnerID=8YFLogxK
U2 - 10.1063/1.358826
DO - 10.1063/1.358826
M3 - Article
AN - SCOPUS:0000406804
VL - 77
SP - 1934
EP - 1937
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 5
ER -