Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • M. Badylevich
  • S. Shamuilia
  • V. V. Afanas'ev
  • A. Stesmans
  • A. Laha
  • H. J. Osten
  • A. Fissel

Organisationseinheiten

Externe Organisationen

  • KU Leuven
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer252101
FachzeitschriftApplied physics letters
Jahrgang90
Ausgabenummer25
PublikationsstatusVeröffentlicht - 18 Juni 2007

Abstract

Internal photoemission, photoconductivity, and spectroscopic ellipsometry experiments were carried out to characterize the electronic structure of interfaces of (001) and (111)-oriented Si with crystalline (epitaxially grown) and amorphous Gd2O3 insulators. The energy barriers for electrons and holes (3.2 and 3.9 eV, respectively) appear to be sensitive neither to the orientation of the Si crystal surface nor to the oxide phase (crystalline or amorphous). This result indicates that despite the difference in Si-O bond density in going from (001) to (111)Si, the interface dipoles do not ensue any measurable effect on the electronic structure of the interface and the associated band offsets.

ASJC Scopus Sachgebiete

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Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. / Badylevich, M.; Shamuilia, S.; Afanas'ev, V. V. et al.
in: Applied physics letters, Jahrgang 90, Nr. 25, 252101, 18.06.2007.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Badylevich M, Shamuilia S, Afanas'ev VV, Stesmans A, Laha A, Osten HJ et al. Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. Applied physics letters. 2007 Jun 18;90(25):252101. doi: 10.1063/1.2746419
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abstract = "Internal photoemission, photoconductivity, and spectroscopic ellipsometry experiments were carried out to characterize the electronic structure of interfaces of (001) and (111)-oriented Si with crystalline (epitaxially grown) and amorphous Gd2O3 insulators. The energy barriers for electrons and holes (3.2 and 3.9 eV, respectively) appear to be sensitive neither to the orientation of the Si crystal surface nor to the oxide phase (crystalline or amorphous). This result indicates that despite the difference in Si-O bond density in going from (001) to (111)Si, the interface dipoles do not ensue any measurable effect on the electronic structure of the interface and the associated band offsets.",
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AU - Badylevich, M.

AU - Shamuilia, S.

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Laha, A.

AU - Osten, H. J.

AU - Fissel, A.

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