Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | PAWR 2018 - Proceedings 2018 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications |
| Seiten | 20-22 |
| Seitenumfang | 3 |
| ISBN (elektronisch) | 9781538612897 |
| Publikationsstatus | Veröffentlicht - 8 März 2018 |
Abstract
This paper presents a 10 Watt gallium nitride (GaN) based inverse class-F power amplifier with dynamic load modulation. The designed power amplifier uses an adaptive output matching network, which is realized using MEMS switches (micro electro mechanical systems), for the enhancement of the power added efficiency over the dynamic output range. Through the load modulation achieved by the adaptive matching network an efficiency enhancement of approximately 30 pp (percentage point) at 10-dB-back-off at the drain of the transistor is achieved compared to a power amplifier without load modulation. Through the use of an in situ measurement approach in-depth investigations of the working principle of the realized amplifier and adaptive matching network are possible.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Computernetzwerke und -kommunikation
- Physik und Astronomie (insg.)
- Instrumentierung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
PAWR 2018 - Proceedings 2018 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications. 2018. S. 20-22.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Investigation of the dynamic load modulation of an inverse class-F power amplifier with an adaptive matching network
AU - Probst, Steffen
AU - Berkelmann, Lukas
AU - Lüers, Bernard
AU - Geck, Bernd
AU - Manteuffel, Dirk
N1 - Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/3/8
Y1 - 2018/3/8
N2 - This paper presents a 10 Watt gallium nitride (GaN) based inverse class-F power amplifier with dynamic load modulation. The designed power amplifier uses an adaptive output matching network, which is realized using MEMS switches (micro electro mechanical systems), for the enhancement of the power added efficiency over the dynamic output range. Through the load modulation achieved by the adaptive matching network an efficiency enhancement of approximately 30 pp (percentage point) at 10-dB-back-off at the drain of the transistor is achieved compared to a power amplifier without load modulation. Through the use of an in situ measurement approach in-depth investigations of the working principle of the realized amplifier and adaptive matching network are possible.
AB - This paper presents a 10 Watt gallium nitride (GaN) based inverse class-F power amplifier with dynamic load modulation. The designed power amplifier uses an adaptive output matching network, which is realized using MEMS switches (micro electro mechanical systems), for the enhancement of the power added efficiency over the dynamic output range. Through the load modulation achieved by the adaptive matching network an efficiency enhancement of approximately 30 pp (percentage point) at 10-dB-back-off at the drain of the transistor is achieved compared to a power amplifier without load modulation. Through the use of an in situ measurement approach in-depth investigations of the working principle of the realized amplifier and adaptive matching network are possible.
KW - Adaptive matching network
KW - efficiency enhancement
KW - inverse class-F
KW - load modulation
KW - power amplifier
KW - time domain measurement
UR - http://www.scopus.com/inward/record.url?scp=85050746150&partnerID=8YFLogxK
U2 - 10.1109/pawr.2018.8310056
DO - 10.1109/pawr.2018.8310056
M3 - Conference contribution
SN - 9781538612903
SP - 20
EP - 22
BT - PAWR 2018 - Proceedings 2018 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
ER -