Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013 |
| Publikationsstatus | Veröffentlicht - 2013 |
| Veranstaltung | 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013 - Wroclaw, Polen Dauer: 14 Apr. 2013 → 17 Apr. 2013 |
Publikationsreihe
| Name | 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013 |
|---|
Abstract
For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing step. The thermal-electrical and thermo-mechanical properties of this metallization is different from titanium or aluminium. Hence the forming TiAl3 layer influences the thermalelectrical, thermo-mechanical behaviour and reduces the current capability. The influence of the deposition temperatures on the thermal-electrical behaviour is investigated. Three different deposition temperatures of 150 °C, 250 °C and 470 °C were considered. Also the behaviour of anisotropic etching was investigated with regard to the reduced current capability.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Mathematik (insg.)
- Modellierung und Simulation
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- BibTex
- RIS
2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013. 2013. 6529896 (2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Investigation of temperature gradients with regard to thermomigration in aluminium metallizations
AU - Kludt, Jörg
AU - Weide-Zaage, K.
AU - Ackermann, M.
AU - Hein, V.
N1 - Copyright: Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing step. The thermal-electrical and thermo-mechanical properties of this metallization is different from titanium or aluminium. Hence the forming TiAl3 layer influences the thermalelectrical, thermo-mechanical behaviour and reduces the current capability. The influence of the deposition temperatures on the thermal-electrical behaviour is investigated. Three different deposition temperatures of 150 °C, 250 °C and 470 °C were considered. Also the behaviour of anisotropic etching was investigated with regard to the reduced current capability.
AB - For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing step. The thermal-electrical and thermo-mechanical properties of this metallization is different from titanium or aluminium. Hence the forming TiAl3 layer influences the thermalelectrical, thermo-mechanical behaviour and reduces the current capability. The influence of the deposition temperatures on the thermal-electrical behaviour is investigated. Three different deposition temperatures of 150 °C, 250 °C and 470 °C were considered. Also the behaviour of anisotropic etching was investigated with regard to the reduced current capability.
UR - http://www.scopus.com/inward/record.url?scp=84881003168&partnerID=8YFLogxK
U2 - 10.1109/EuroSimE.2013.6529896
DO - 10.1109/EuroSimE.2013.6529896
M3 - Conference contribution
AN - SCOPUS:84881003168
SN - 9781467361385
T3 - 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013
BT - 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013
T2 - 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013
Y2 - 14 April 2013 through 17 April 2013
ER -