Investigation of carrier lifetime instabilities in Cz-grown silicon

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

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  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)13-18
Seitenumfang6
FachzeitschriftConference Record of the IEEE Photovoltaic Specialists Conference
PublikationsstatusVeröffentlicht - 1997
Extern publiziertJa
Veranstaltung1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, USA / Vereinigte Staaten
Dauer: 29 Sept. 19973 Okt. 1997

Abstract

In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.

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Zitieren

Investigation of carrier lifetime instabilities in Cz-grown silicon. / Schmidt, Jan; Aberle, Armin G.; Hezel, Rudolf.
in: Conference Record of the IEEE Photovoltaic Specialists Conference, 1997, S. 13-18.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Schmidt, J, Aberle, AG & Hezel, R 1997, 'Investigation of carrier lifetime instabilities in Cz-grown silicon', Conference Record of the IEEE Photovoltaic Specialists Conference, S. 13-18.
Schmidt, J., Aberle, A. G., & Hezel, R. (1997). Investigation of carrier lifetime instabilities in Cz-grown silicon. Conference Record of the IEEE Photovoltaic Specialists Conference, 13-18.
Schmidt J, Aberle AG, Hezel R. Investigation of carrier lifetime instabilities in Cz-grown silicon. Conference Record of the IEEE Photovoltaic Specialists Conference. 1997;13-18.
Schmidt, Jan ; Aberle, Armin G. ; Hezel, Rudolf. / Investigation of carrier lifetime instabilities in Cz-grown silicon. in: Conference Record of the IEEE Photovoltaic Specialists Conference. 1997 ; S. 13-18.
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abstract = "In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.",
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Download

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T1 - Investigation of carrier lifetime instabilities in Cz-grown silicon

AU - Schmidt, Jan

AU - Aberle, Armin G.

AU - Hezel, Rudolf

PY - 1997

Y1 - 1997

N2 - In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.

AB - In the literature it is well known that the low-injection bulk carrier lifetime of boron-doped Cz-grown silicon is not a constant material property but, depending on previous thermal treatments and light exposure, varies between two states corresponding to a high and a low lifetime value. The upper state is obtained by means of low-temperature annealing, while illumination degrades the lifetime towards the value of the lower state. In order to improve the understanding of this phenomenon, we performed comprehensive carrier lifetime measurements on solar- and electronic-grade boron, gallium, and phosphorus doped Cz silicon wafers obtained from different manufacturers. Based on the experimental results, a new model is introduced which attributes the disappointingly low stable lifetimes of illuminated boron-doped Cz silicon with resistivity around 1 Ωcm to boron-oxygen pairs. From this model, simple recipes are derived which might lead to an improvement of the efficiency of commercial Cz silicon solar cells.

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JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

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T2 - 1997 IEEE 26th Photovoltaic Specialists Conference

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