Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 435-440 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 124 |
| Publikationsstatus | Veröffentlicht - 2017 |
| Veranstaltung | 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Deutschland Dauer: 3 Apr. 2017 → 5 Apr. 2017 |
Abstract
Carrier selective junctions formed by polycrystalline silicon (poly-Si) on ultra-thin silicon oxide films are currently in the spotlight of silicon photovoltaics. We develop a simple method using selective etching and conventional optical microscopy to determine the pinhole density in interfacial oxide films of poly-Si on oxide (POLO)-junctions with excellent electrical properties. We characterize the selective etching of poly-Si versus ultra-thin silicon oxide. We use test structures with deliberately patterned openings and 3 nm thin oxide films to check the feasibility of magnification by undercutting the interfacial oxide. With the successful proof of our concept we introduce a new method to access the density of nanometer-size pinholes in POLO-junctions with excellent passivation properties.
ASJC Scopus Sachgebiete
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Energy Procedia, Jahrgang 124, 2017, S. 435-440.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Introducing pinhole magnification by selective etching
T2 - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017
AU - Tetzlaff, Dominic
AU - Dzinnik, Marvin
AU - Krügener, Jan
AU - Larionova, Yevgeniya
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Höhne, Uwe
AU - Kähler, Jan Dirk
AU - Wietler, Tobias F.
N1 - Funding information: This work was supported by the German Federal Ministry for Economic Affairs and Energy (MB Wi) under contract no. 0325702B (POLO). We thank Guido Glowatzk i, Andrea Lissel and Raymond iZ eseniß for their help with sample processing.
PY - 2017
Y1 - 2017
N2 - Carrier selective junctions formed by polycrystalline silicon (poly-Si) on ultra-thin silicon oxide films are currently in the spotlight of silicon photovoltaics. We develop a simple method using selective etching and conventional optical microscopy to determine the pinhole density in interfacial oxide films of poly-Si on oxide (POLO)-junctions with excellent electrical properties. We characterize the selective etching of poly-Si versus ultra-thin silicon oxide. We use test structures with deliberately patterned openings and 3 nm thin oxide films to check the feasibility of magnification by undercutting the interfacial oxide. With the successful proof of our concept we introduce a new method to access the density of nanometer-size pinholes in POLO-junctions with excellent passivation properties.
AB - Carrier selective junctions formed by polycrystalline silicon (poly-Si) on ultra-thin silicon oxide films are currently in the spotlight of silicon photovoltaics. We develop a simple method using selective etching and conventional optical microscopy to determine the pinhole density in interfacial oxide films of poly-Si on oxide (POLO)-junctions with excellent electrical properties. We characterize the selective etching of poly-Si versus ultra-thin silicon oxide. We use test structures with deliberately patterned openings and 3 nm thin oxide films to check the feasibility of magnification by undercutting the interfacial oxide. With the successful proof of our concept we introduce a new method to access the density of nanometer-size pinholes in POLO-junctions with excellent passivation properties.
KW - carrier selective contacts
KW - pinholes
KW - polysilicon
KW - Tetramethylammonium hydroxide (TMAH)
UR - http://www.scopus.com/inward/record.url?scp=85029839200&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2017.09.270
DO - 10.1016/j.egypro.2017.09.270
M3 - Conference article
AN - SCOPUS:85029839200
VL - 124
SP - 435
EP - 440
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
Y2 - 3 April 2017 through 5 April 2017
ER -