Interplay of Electron and Nuclear Spin Noise in n -Type GaAs

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

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  • Ruhr-Universität Bochum
  • RAS - Ioffe Physico Technical Institute
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OriginalspracheEnglisch
Aufsatznummer176601
FachzeitschriftPhysical Review Letters
Jahrgang115
Ausgabenummer17
PublikationsstatusVeröffentlicht - 20 Okt. 2015

Abstract

We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise.

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Interplay of Electron and Nuclear Spin Noise in n -Type GaAs. / Berski, Fabian; Hübner, Jens; Oestreich, Michael et al.
in: Physical Review Letters, Jahrgang 115, Nr. 17, 176601, 20.10.2015.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Berski F, Hübner J, Oestreich M, Ludwig A, Wieck AD, Glazov M. Interplay of Electron and Nuclear Spin Noise in n -Type GaAs. Physical Review Letters. 2015 Okt 20;115(17):176601. doi: 10.1103/PhysRevLett.115.176601
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AU - Berski, Fabian

AU - Hübner, Jens

AU - Oestreich, Michael

AU - Ludwig, Arne

AU - Wieck, A. D.

AU - Glazov, Mikhail

PY - 2015/10/20

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